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Title: Thin films of copper antimony sulfide: A photovoltaic absorber material

Abstract

Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layermore » were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.« less

Authors:
 [1];  [1];  [2]; ; ;  [1];  [1];  [2]
  1. Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico)
  2. (Mexico)
Publication Date:
OSTI Identifier:
22420761
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 61; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY SULFIDES; CADMIUM SULFIDES; CHEMICAL STATE; COPPER COMPLEXES; DEPOSITION; ELECTRICAL PROPERTIES; EV RANGE; GLASS; LAYERS; ORTHORHOMBIC LATTICES; PHOTOVOLTAIC EFFECT; SYNTHESIS; THIN FILMS; TIN OXIDES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Ornelas-Acosta, R.E., Shaji, S., Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León, Avellaneda, D., Castillo, G.A., Das Roy, T.K., Krishnan, B., E-mail: kbindu_k@yahoo.com, and Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León. Thin films of copper antimony sulfide: A photovoltaic absorber material. United States: N. p., 2015. Web. doi:10.1016/J.MATERRESBULL.2014.10.027.
Ornelas-Acosta, R.E., Shaji, S., Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León, Avellaneda, D., Castillo, G.A., Das Roy, T.K., Krishnan, B., E-mail: kbindu_k@yahoo.com, & Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León. Thin films of copper antimony sulfide: A photovoltaic absorber material. United States. doi:10.1016/J.MATERRESBULL.2014.10.027.
Ornelas-Acosta, R.E., Shaji, S., Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León, Avellaneda, D., Castillo, G.A., Das Roy, T.K., Krishnan, B., E-mail: kbindu_k@yahoo.com, and Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León. Thu . "Thin films of copper antimony sulfide: A photovoltaic absorber material". United States. doi:10.1016/J.MATERRESBULL.2014.10.027.
@article{osti_22420761,
title = {Thin films of copper antimony sulfide: A photovoltaic absorber material},
author = {Ornelas-Acosta, R.E. and Shaji, S. and Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León and Avellaneda, D. and Castillo, G.A. and Das Roy, T.K. and Krishnan, B., E-mail: kbindu_k@yahoo.com and Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León},
abstractNote = {Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.},
doi = {10.1016/J.MATERRESBULL.2014.10.027},
journal = {Materials Research Bulletin},
number = ,
volume = 61,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}