Investigation of structural, optical, electrical and dielectric properties of catalytic sprayed hausmannite thin film
Hausmannite Mn{sub 3}O{sub 4} thin film have been synthesized using spray pyrolysis method. These films are characterized using X-ray diffraction (XRD), atomic force microscope AFM, UV–vis–NIR spectroscopy and impedance spectroscopy. XRD study confirms the tetragonal structure of the as-deposited films with lattice parameters, a = 5.1822 Å and c = 9.4563 Å and a grain size of about 56 nm. UV–vis–NIR spectroscopy was further used to estimate optical constants such as extinction coefficient, refractive index, band gap and Urbach energy. Moreover, impedance spectroscopy analysis was employed to estimate electrical and dielectrical properties of the sprayed thin films. The activation energy values deduced from DC conductivity and relaxation frequency were almost the same, revealing that the transport phenomena is thermally activated by hopping between localized states. The AC conductivity is found to be proportional to ω{sup s}. The temperature dependence of the AC conductivity and the frequency exponent, s was reasonably well interpreted in terms of the correlated barrier-hopping CBH model. The dielectric properties were sensitive to temperature and frequency. The study of the electrical modulus indicated that the charge carrier was localized. Experimental results concerning optical constants as Urbach energy, dielectric constant, electric modulus and AC and DC conductivity were discussed in terms of the hopping model as suggested by Elliott.
- OSTI ID:
- 22420729
- Journal Information:
- Materials Research Bulletin, Vol. 60; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ACTIVATION ENERGY
ATOMIC FORCE MICROSCOPY
CHARGE CARRIERS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
EPITAXY
GRAIN SIZE
IMPEDANCE
INFRARED SPECTRA
LATTICE PARAMETERS
MANGANESE OXIDES
PERMITTIVITY
REFRACTIVE INDEX
RELAXATION
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
THIN FILMS
X-RAY DIFFRACTION