Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse
Abstract
Highlights: • g-C{sub 3}N{sub 4}, as an oxygen free and metal free protective material for Si, was proposed. • g-C{sub 3}N{sub 4} nanosheets wrapped Si nanowire array was synthesized. • SiNW/g-C{sub 3}N{sub 4} exhibited enhancement of photoelectrochemical stability and photocurrent. - Abstract: In order to inhibit the oxidation of Si materials in aqueous solution, Si nanowire array was wrapped by ultra-thin g-C{sub 3}N{sub 4} nanosheets via an electrophoresis process. Scanning electron microscopy and transmission electron microscopy images showed that g-C{sub 3}N{sub 4} nanosheets were evenly distributed on the surface of Si nanowire array. X-ray diffraction patterns indicated that Si nanowire array/g-C{sub 3}N{sub 4} nanosheets were composed of Si (4 0 0 crystal plane) and g-C{sub 3}N{sub 4} (0 0 2 and 1 0 0 crystal planes). The cyclic voltammetry curves revealed that the corrosion of Si nanowire array was restrained under the protection of g-C{sub 3}N{sub 4} nanosheets. Furthermore, the photocurrent density of Si nanowire array/g-C{sub 3}N{sub 4} nanosheets increased by nearly 3 times compared to that of bare Si nanowire array due to the effective charge separation caused by the built-in electric field at the interface. This work will facilitate the applications of Si materials in aqueous solution, suchmore »
- Authors:
- Publication Date:
- OSTI Identifier:
- 22420618
- Resource Type:
- Journal Article
- Journal Name:
- Materials Research Bulletin
- Additional Journal Information:
- Journal Volume: 59; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; AQUEOUS SOLUTIONS; CARBON NITRIDES; COMPARATIVE EVALUATIONS; CORROSION; CRYSTALS; ELECTRIC FIELDS; ELECTROCHEMISTRY; ELECTROPHORESIS; INTERFACES; NANOWIRES; OPTICAL PROPERTIES; OXIDATION; PHOTOCATALYSIS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; TRANSMISSION ELECTRON MICROSCOPY; VOLTAMETRY; X-RAY DIFFRACTION
Citation Formats
Wang, Beibei, Yu, Hongtao, Quan, Xie, and Chen, Shuo. Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse. United States: N. p., 2014.
Web. doi:10.1016/J.MATERRESBULL.2014.07.011.
Wang, Beibei, Yu, Hongtao, Quan, Xie, & Chen, Shuo. Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse. United States. https://doi.org/10.1016/J.MATERRESBULL.2014.07.011
Wang, Beibei, Yu, Hongtao, Quan, Xie, and Chen, Shuo. 2014.
"Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse". United States. https://doi.org/10.1016/J.MATERRESBULL.2014.07.011.
@article{osti_22420618,
title = {Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse},
author = {Wang, Beibei and Yu, Hongtao and Quan, Xie and Chen, Shuo},
abstractNote = {Highlights: • g-C{sub 3}N{sub 4}, as an oxygen free and metal free protective material for Si, was proposed. • g-C{sub 3}N{sub 4} nanosheets wrapped Si nanowire array was synthesized. • SiNW/g-C{sub 3}N{sub 4} exhibited enhancement of photoelectrochemical stability and photocurrent. - Abstract: In order to inhibit the oxidation of Si materials in aqueous solution, Si nanowire array was wrapped by ultra-thin g-C{sub 3}N{sub 4} nanosheets via an electrophoresis process. Scanning electron microscopy and transmission electron microscopy images showed that g-C{sub 3}N{sub 4} nanosheets were evenly distributed on the surface of Si nanowire array. X-ray diffraction patterns indicated that Si nanowire array/g-C{sub 3}N{sub 4} nanosheets were composed of Si (4 0 0 crystal plane) and g-C{sub 3}N{sub 4} (0 0 2 and 1 0 0 crystal planes). The cyclic voltammetry curves revealed that the corrosion of Si nanowire array was restrained under the protection of g-C{sub 3}N{sub 4} nanosheets. Furthermore, the photocurrent density of Si nanowire array/g-C{sub 3}N{sub 4} nanosheets increased by nearly 3 times compared to that of bare Si nanowire array due to the effective charge separation caused by the built-in electric field at the interface. This work will facilitate the applications of Si materials in aqueous solution, such as solar energy harvest and photocatalytic pollution control.},
doi = {10.1016/J.MATERRESBULL.2014.07.011},
url = {https://www.osti.gov/biblio/22420618},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 59,
place = {United States},
year = {Sat Nov 15 00:00:00 EST 2014},
month = {Sat Nov 15 00:00:00 EST 2014}
}