Substrate temperature effect on the growth of carbon nanowalls synthesized via microwave PECVD
- Department of Electrical Engineering, Hanbat National University, Daejeon 305-719 (Korea, Republic of)
- School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
Highlights: • Well grown carbon nanowalls (CNWs) were obtained by using a microwave plasma enhanced chemical vapor deposition (PECVD) with methane and hydrogen gases on Si substrates. • CNWs were grown at the growth temperature of 850 °C showed the highest contact angle. • Raman analysis showed higher I{sub D}/I{sub G} value that the CNWs were grown at more than 850 °C growth temperature. - Abstract: A carbon nanowall (CNW) is a carbon-based nanomaterial that is constructed with vertical-structure graphenes. Thus, it effectively increases the reaction surface of electrodes. In this study, the substrate temperature effect on the growth of CNWs was investigated via microwave plasma enhanced chemical vapor deposition (PECVD) with methane (CH{sub 4}) and hydrogen (H{sub 2}) gases on silicon substrates. To find the growth mechanism of a CNW, its growth temperature was changed from 700 °C to 950 °C. The vertical and surface conditions of the grown CNWs according to the growth temperature were characterized via field emission scanning electron microscopy (FE-SEM). The energy-dispersive spectroscopy (EDS) measurements showed that the CNWs were composed solely of carbon.
- OSTI ID:
- 22420581
- Journal Information:
- Materials Research Bulletin, Vol. 58; Conference: IFFM2013: International forum on functional materials, Jeju City (Korea, Republic of), 27-29 Jun 2013; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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