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Title: Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition

Abstract

Highlights: • Ti doped ZnO films were prepared on Corning XG glass substrate by ALD. • The electrical properties and optical properties were systematically investigated. • An optimized Ti doped ZnO films had low resistivity and excellent optical transmittance. - Abstract: Titanium doped zinc oxide (Ti doped ZnO) films were prepared by atomic layer deposition methods at a deposition temperature of 200 °C. The Ti content in Ti doped ZnO films was varied from 5.08 at.% to 15.02 at.%. X-ray diffraction results indicated that the crystallinity of the Ti doped ZnO films had degraded with increasing Ti content. Transmission electron microscopy was used to investigate the microstructural evolution of the Ti doped ZnO films, showing that both the grain size and crystallinity reduced with increasing Ti content. The electrical resistivity of the Ti doped ZnO films showed a minimum value of 1.6 × 10{sup −3} Ω cm with the Ti content of 6.20 at.%. Furthermore, the Ti doped ZnO films exhibited excellent transmittance.

Authors:
 [1];  [2]; ;  [1]; ;  [2];  [3]; ;  [4];  [5];  [6];  [2];  [6]
  1. School of Convergence Science, Pusan National University, 30 Jangjeong-Dong, Geumjeong-Gu, Busan 609-735 (Korea, Republic of)
  2. Advanced Materials Laboratory, Materials R and D Center, SK Innovation, Daejeon 305-712 (Korea, Republic of)
  3. Department of New Biology, DGIST, Dalseong-gun, Daegu 711-873 (Korea, Republic of)
  4. K-MAC, Yongsan-Dong 554, Yuseong-Gu, Daejeon 305-500 (Korea, Republic of)
  5. Automotive Parts Institute Center 35, Maegoksaneop, Buk-gu, Ulsan 683-420 (Korea, Republic of)
  6. School of Materials Science and Engineering, Pusan National University, 30 Jangjeon-Dong Geumjeong-Gu, Busan 609-735 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22420539
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 57; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONCENTRATION RATIO; DEPOSITION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GLASS; GRAIN SIZE; OPACITY; OPTICAL PROPERTIES; SUBSTRATES; THIN FILMS; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Wan, Zhixin, Kwack, Won-Sub, Lee, Woo-Jae, Jang, Seung-II, Kim, Hye-Ri, Kim, Jin-Woong, Jung, Kang-Won, Min, Won-Ja, Yu, Kyu-Sang, Park, Sung-Hun, Yun, Eun-Young, Kim, Jin-Hyock, E-mail: jinhyock.kim@sk.com, and Kwon, Se-Hun, E-mail: sehun@pusan.ac.kr. Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition. United States: N. p., 2014. Web. doi:10.1016/J.MATERRESBULL.2014.04.070.
Wan, Zhixin, Kwack, Won-Sub, Lee, Woo-Jae, Jang, Seung-II, Kim, Hye-Ri, Kim, Jin-Woong, Jung, Kang-Won, Min, Won-Ja, Yu, Kyu-Sang, Park, Sung-Hun, Yun, Eun-Young, Kim, Jin-Hyock, E-mail: jinhyock.kim@sk.com, & Kwon, Se-Hun, E-mail: sehun@pusan.ac.kr. Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition. United States. doi:10.1016/J.MATERRESBULL.2014.04.070.
Wan, Zhixin, Kwack, Won-Sub, Lee, Woo-Jae, Jang, Seung-II, Kim, Hye-Ri, Kim, Jin-Woong, Jung, Kang-Won, Min, Won-Ja, Yu, Kyu-Sang, Park, Sung-Hun, Yun, Eun-Young, Kim, Jin-Hyock, E-mail: jinhyock.kim@sk.com, and Kwon, Se-Hun, E-mail: sehun@pusan.ac.kr. Mon . "Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition". United States. doi:10.1016/J.MATERRESBULL.2014.04.070.
@article{osti_22420539,
title = {Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition},
author = {Wan, Zhixin and Kwack, Won-Sub and Lee, Woo-Jae and Jang, Seung-II and Kim, Hye-Ri and Kim, Jin-Woong and Jung, Kang-Won and Min, Won-Ja and Yu, Kyu-Sang and Park, Sung-Hun and Yun, Eun-Young and Kim, Jin-Hyock, E-mail: jinhyock.kim@sk.com and Kwon, Se-Hun, E-mail: sehun@pusan.ac.kr},
abstractNote = {Highlights: • Ti doped ZnO films were prepared on Corning XG glass substrate by ALD. • The electrical properties and optical properties were systematically investigated. • An optimized Ti doped ZnO films had low resistivity and excellent optical transmittance. - Abstract: Titanium doped zinc oxide (Ti doped ZnO) films were prepared by atomic layer deposition methods at a deposition temperature of 200 °C. The Ti content in Ti doped ZnO films was varied from 5.08 at.% to 15.02 at.%. X-ray diffraction results indicated that the crystallinity of the Ti doped ZnO films had degraded with increasing Ti content. Transmission electron microscopy was used to investigate the microstructural evolution of the Ti doped ZnO films, showing that both the grain size and crystallinity reduced with increasing Ti content. The electrical resistivity of the Ti doped ZnO films showed a minimum value of 1.6 × 10{sup −3} Ω cm with the Ti content of 6.20 at.%. Furthermore, the Ti doped ZnO films exhibited excellent transmittance.},
doi = {10.1016/J.MATERRESBULL.2014.04.070},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 57,
place = {United States},
year = {2014},
month = {9}
}