skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

Abstract

High resolution scanning transmission electron microscopy and atom probe tomography experiments reveal the presence of an intermediate layer at the interface between two binary compounds with no common atom, namely, ZnTe and CdSe for samples grown by Molecular Beam Epitaxy under standard conditions. This thin transition layer, of the order of 1 to 3 atomic planes, contains typically one monolayer of ZnSe. Even if it occurs at each interface, the direct interface, i.e., ZnTe on CdSe, is sharper than the reverse one, where the ZnSe layer is likely surrounded by alloyed layers. On the other hand, a CdTe-like interface was never observed. This interface knowledge is crucial to properly design superlattices for optoelectronic applications and to master band-gap engineering.

Authors:
; ; ;  [1];  [2]; ; ; ;  [1];  [2];  [1];  [2]
  1. Université Grenoble Alpes, F-38000 Grenoble (France)
  2. (France)
Publication Date:
OSTI Identifier:
22420244
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOYS; CADMIUM SELENIDES; CADMIUM TELLURIDES; ELECTRONIC STRUCTURE; LAYERS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SUPERLATTICES; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; ZINC SELENIDES; ZINC TELLURIDES

Citation Formats

Bonef, Bastien, Rouvière, Jean-Luc, Jouneau, Pierre-Henri, Bellet-Amalric, Edith, CEA, INAC-SP2M, F-38054 Grenoble, Gérard, Lionel, Mariette, Henri, André, Régis, Bougerol, Catherine, CNRS, Inst. NEEL, F-38042 Grenoble, Grenier, Adeline, and CEA, LETI, MINATEC Campus, F-38054 Grenoble. Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography. United States: N. p., 2015. Web. doi:10.1063/1.4907648.
Bonef, Bastien, Rouvière, Jean-Luc, Jouneau, Pierre-Henri, Bellet-Amalric, Edith, CEA, INAC-SP2M, F-38054 Grenoble, Gérard, Lionel, Mariette, Henri, André, Régis, Bougerol, Catherine, CNRS, Inst. NEEL, F-38042 Grenoble, Grenier, Adeline, & CEA, LETI, MINATEC Campus, F-38054 Grenoble. Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography. United States. doi:10.1063/1.4907648.
Bonef, Bastien, Rouvière, Jean-Luc, Jouneau, Pierre-Henri, Bellet-Amalric, Edith, CEA, INAC-SP2M, F-38054 Grenoble, Gérard, Lionel, Mariette, Henri, André, Régis, Bougerol, Catherine, CNRS, Inst. NEEL, F-38042 Grenoble, Grenier, Adeline, and CEA, LETI, MINATEC Campus, F-38054 Grenoble. Mon . "Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography". United States. doi:10.1063/1.4907648.
@article{osti_22420244,
title = {Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography},
author = {Bonef, Bastien and Rouvière, Jean-Luc and Jouneau, Pierre-Henri and Bellet-Amalric, Edith and CEA, INAC-SP2M, F-38054 Grenoble and Gérard, Lionel and Mariette, Henri and André, Régis and Bougerol, Catherine and CNRS, Inst. NEEL, F-38042 Grenoble and Grenier, Adeline and CEA, LETI, MINATEC Campus, F-38054 Grenoble},
abstractNote = {High resolution scanning transmission electron microscopy and atom probe tomography experiments reveal the presence of an intermediate layer at the interface between two binary compounds with no common atom, namely, ZnTe and CdSe for samples grown by Molecular Beam Epitaxy under standard conditions. This thin transition layer, of the order of 1 to 3 atomic planes, contains typically one monolayer of ZnSe. Even if it occurs at each interface, the direct interface, i.e., ZnTe on CdSe, is sharper than the reverse one, where the ZnSe layer is likely surrounded by alloyed layers. On the other hand, a CdTe-like interface was never observed. This interface knowledge is crucial to properly design superlattices for optoelectronic applications and to master band-gap engineering.},
doi = {10.1063/1.4907648},
journal = {Applied Physics Letters},
number = 5,
volume = 106,
place = {United States},
year = {Mon Feb 02 00:00:00 EST 2015},
month = {Mon Feb 02 00:00:00 EST 2015}
}