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Title: A study of vacancy defects related to gray tracks in KTiOPO{sub 4} (KTP) using positron annihilation

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4903305· OSTI ID:22420191
; ; ;  [1]; ;  [2]
  1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)
  2. Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

For the first time to our knowledge, positron annihilation spectroscopy (PAS) was used to study vacancy defects in KTiOPO{sub 4} (KTP) single crystals. Positron annihilation lifetime spectroscopy combined with dielectric measurements identified the existence of oxygen vacancies and reflected the concentration of vacancy defects in three samples. The vacancy defects in KTP do not consist of monovacancies, but rather vacancy complexes. Doppler broadening indicates that the vacancy defects are distributed uniformly. A relationship is established where a crystal with a low oxygen vacancy concentration and a highly balanced stoichiometry has a higher resistance to gray track formation.

OSTI ID:
22420191
Journal Information:
AIP Advances, Vol. 4, Issue 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
Country of Publication:
United States
Language:
English