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Title: On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process

Abstract

Since epitaxial silicene is not chemically inert under ambient conditions, its application in devices and the ex-situ characterization outside of ultrahigh vacuum environments require the use of an insulating capping layer. Here, we report on a study of the feasibility of encapsulating epitaxial silicene on ZrB{sub 2}(0001) thin films grown on Si(111) substrates by aluminum nitride (AlN) deposited using trimethylaluminum (TMA) and ammonia (NH{sub 3}) precursors. By in-situ high-resolution core-level photoelectron spectroscopy, the chemical modifications of the surface due to subsequent exposure to TMA and NH{sub 3} molecules, at temperatures of 300 °C and 400 °C, respectively, have been investigated. While an AlN-related layer can indeed be grown, silicene reacts strongly with both precursor molecules resulting in the formation of Si–C and Si–N bonds such that the use of these precursors does not allow for the protective AlN encapsulation that leaves the electronic properties of silicene intact.

Authors:
; ; ;  [1]; ;  [2]
  1. MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)
  2. School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292 (Japan)
Publication Date:
OSTI Identifier:
22416127
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Chemical Physics; Journal Volume: 142; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ALUMINIUM; ALUMINIUM NITRIDES; AMMONIA; CHEMICAL BONDS; EPITAXY; LAYERS; MOLECULES; PHOTOELECTRON SPECTROSCOPY; PRECURSOR; SILICENE; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS; ZIRCONIUM BORIDES

Citation Formats

Van Bui, H., E-mail: H.VanBui@utwente.nl, E-mail: M.P.deJong@utwente.nl, Wiggers, F. B., Kovalgin, A. Y., Jong, M. P. de, E-mail: H.VanBui@utwente.nl, E-mail: M.P.deJong@utwente.nl, Friedlein, R., and Yamada-Takamura, Y. On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process. United States: N. p., 2015. Web. doi:10.1063/1.4907375.
Van Bui, H., E-mail: H.VanBui@utwente.nl, E-mail: M.P.deJong@utwente.nl, Wiggers, F. B., Kovalgin, A. Y., Jong, M. P. de, E-mail: H.VanBui@utwente.nl, E-mail: M.P.deJong@utwente.nl, Friedlein, R., & Yamada-Takamura, Y. On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process. United States. doi:10.1063/1.4907375.
Van Bui, H., E-mail: H.VanBui@utwente.nl, E-mail: M.P.deJong@utwente.nl, Wiggers, F. B., Kovalgin, A. Y., Jong, M. P. de, E-mail: H.VanBui@utwente.nl, E-mail: M.P.deJong@utwente.nl, Friedlein, R., and Yamada-Takamura, Y. Sat . "On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process". United States. doi:10.1063/1.4907375.
@article{osti_22416127,
title = {On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process},
author = {Van Bui, H., E-mail: H.VanBui@utwente.nl, E-mail: M.P.deJong@utwente.nl and Wiggers, F. B. and Kovalgin, A. Y. and Jong, M. P. de, E-mail: H.VanBui@utwente.nl, E-mail: M.P.deJong@utwente.nl and Friedlein, R. and Yamada-Takamura, Y.},
abstractNote = {Since epitaxial silicene is not chemically inert under ambient conditions, its application in devices and the ex-situ characterization outside of ultrahigh vacuum environments require the use of an insulating capping layer. Here, we report on a study of the feasibility of encapsulating epitaxial silicene on ZrB{sub 2}(0001) thin films grown on Si(111) substrates by aluminum nitride (AlN) deposited using trimethylaluminum (TMA) and ammonia (NH{sub 3}) precursors. By in-situ high-resolution core-level photoelectron spectroscopy, the chemical modifications of the surface due to subsequent exposure to TMA and NH{sub 3} molecules, at temperatures of 300 °C and 400 °C, respectively, have been investigated. While an AlN-related layer can indeed be grown, silicene reacts strongly with both precursor molecules resulting in the formation of Si–C and Si–N bonds such that the use of these precursors does not allow for the protective AlN encapsulation that leaves the electronic properties of silicene intact.},
doi = {10.1063/1.4907375},
journal = {Journal of Chemical Physics},
number = 6,
volume = 142,
place = {United States},
year = {Sat Feb 14 00:00:00 EST 2015},
month = {Sat Feb 14 00:00:00 EST 2015}
}