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Title: Study of Ga incorporation in glassy arsenic selenides by high-resolution XPS and EXAFS

Abstract

Effect of Ga addition on the structure of vitreous As{sub 2}Se{sub 3} is studied using high-resolution X-ray photoelectron spectroscopy and extended X-ray absorption fine structure techniques. The “8-N” rule is shown to be violated for Ga atoms and, possibly, for certain number of As atoms. On the contrary, Se keeps its 2-fold coordination according to “8-N” rule in the amorphous phase throughout all the compositions. Crystalline inclusions appear in the amorphous structure of the investigated glasses at Ga concentrations greater than 3 at. %. These inclusions are presumably associated with Ga{sub 2}Se{sub 3} crystallites and transition phases/defects formed at the boundaries of these crystallites and host amorphous matrix. The existence of Ga–As and Se–Se bonds in the samples with higher Ga content is supported by present studies.

Authors:
 [1];  [2];  [3]; ; ;  [2];  [4];  [5]
  1. Department of Physics and Astronomy, Austin Peay State University, Clarksville, Tennessee 37044 (United States)
  2. Equipe Verres et Céramiques UMR-CNRS 6226, Université de Rennes 1, 35042 Rennes Cedex (France)
  3. (Ukraine)
  4. Center for Microelectronics and Nanotechnology, University of Rzeszow, 1, Pigonia Str., 35-310 Rzeszow (Poland)
  5. Department of Materials Science and Engineering, Lehigh University, 5 East Packer Avenue, Bethlehem, Pennsylvania 18015-3195 (United States)
Publication Date:
OSTI Identifier:
22415773
Resource Type:
Journal Article
Journal Name:
Journal of Chemical Physics
Additional Journal Information:
Journal Volume: 142; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-9606
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ABSORPTION; ABSORPTION SPECTROSCOPY; AMORPHOUS STATE; ARSENIC SELENIDES; ATOMS; CHEMICAL BONDS; CONCENTRATION RATIO; FINE STRUCTURE; GALLIUM SELENIDES; GLASS; MATRIX MATERIALS; PHASE TRANSFORMATIONS; RESOLUTION; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTROSCOPY

Citation Formats

Golovchak, R., E-mail: holovchakr@apsu.edu, Shpotyuk, Ya., Scientific Research Company “Carat”, 202, Stryjska Str., 79031 Lviv, Nazabal, V., Boussard-Pledel, C., Bureau, B., Cebulski, J., and Jain, H. Study of Ga incorporation in glassy arsenic selenides by high-resolution XPS and EXAFS. United States: N. p., 2015. Web. doi:10.1063/1.4919947.
Golovchak, R., E-mail: holovchakr@apsu.edu, Shpotyuk, Ya., Scientific Research Company “Carat”, 202, Stryjska Str., 79031 Lviv, Nazabal, V., Boussard-Pledel, C., Bureau, B., Cebulski, J., & Jain, H. Study of Ga incorporation in glassy arsenic selenides by high-resolution XPS and EXAFS. United States. doi:10.1063/1.4919947.
Golovchak, R., E-mail: holovchakr@apsu.edu, Shpotyuk, Ya., Scientific Research Company “Carat”, 202, Stryjska Str., 79031 Lviv, Nazabal, V., Boussard-Pledel, C., Bureau, B., Cebulski, J., and Jain, H. Thu . "Study of Ga incorporation in glassy arsenic selenides by high-resolution XPS and EXAFS". United States. doi:10.1063/1.4919947.
@article{osti_22415773,
title = {Study of Ga incorporation in glassy arsenic selenides by high-resolution XPS and EXAFS},
author = {Golovchak, R., E-mail: holovchakr@apsu.edu and Shpotyuk, Ya. and Scientific Research Company “Carat”, 202, Stryjska Str., 79031 Lviv and Nazabal, V. and Boussard-Pledel, C. and Bureau, B. and Cebulski, J. and Jain, H.},
abstractNote = {Effect of Ga addition on the structure of vitreous As{sub 2}Se{sub 3} is studied using high-resolution X-ray photoelectron spectroscopy and extended X-ray absorption fine structure techniques. The “8-N” rule is shown to be violated for Ga atoms and, possibly, for certain number of As atoms. On the contrary, Se keeps its 2-fold coordination according to “8-N” rule in the amorphous phase throughout all the compositions. Crystalline inclusions appear in the amorphous structure of the investigated glasses at Ga concentrations greater than 3 at. %. These inclusions are presumably associated with Ga{sub 2}Se{sub 3} crystallites and transition phases/defects formed at the boundaries of these crystallites and host amorphous matrix. The existence of Ga–As and Se–Se bonds in the samples with higher Ga content is supported by present studies.},
doi = {10.1063/1.4919947},
journal = {Journal of Chemical Physics},
issn = {0021-9606},
number = 18,
volume = 142,
place = {United States},
year = {2015},
month = {5}
}