Engineering ferroelectric tunnel junctions through potential profile shaping

Journal Article · Mon Jun 01 00:00:00 EDT 2015 · APL materials

DOI:https://doi.org/10.1063/1.4922769· OSTI ID:22415287

Boyn, S.; Fusil, S.; Carrétéro, C.; Garcia, K.; Collin, S.; Deranlot, C.; Bibes, M.; Barthélémy, A. ^[1]; Xavier, S. ^[2]

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1. Unité Mixte de Physique CNRS/Thales, 1 Av. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France)
2. Thales Research and Technology, 1 Av. Fresnel, 91767 Palaiseau (France)

We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO{sub 3}. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

• OSTI ID: 22415287
• Journal Information: APL materials, Vol. 3, Issue 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH COMPOUNDS
COBALT
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRODES
ELECTRONIC STRUCTURE
FERRITES
FERROELECTRIC MATERIALS
IRIDIUM
NICKEL
TEMPERATURE RANGE 0273-0400 K
TUNGSTEN
TUNNEL EFFECT
WORK FUNCTIONS