Research Update: Point defects in CdTe{sub x}Se{sub 1−x} crystals grown from a Te-rich solution for applications in detecting radiation
Abstract
We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.
- Authors:
-
- Brookhaven National Laboratory, Upton, New York 11973 (United States)
- Korea University, Seoul 136-701 (Korea, Republic of)
- Fisk University, Nashville, Tennessee 37208 (United States)
- Publication Date:
- OSTI Identifier:
- 22415264
- Resource Type:
- Journal Article
- Journal Name:
- APL materials
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CADMIUM SELENIDES; CADMIUM TELLURIDES; CAPTURE; CONCENTRATION RATIO; CROSS SECTIONS; CRYSTAL GROWTH; CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EV RANGE; TRAPS; VACANCIES
Citation Formats
Gul, R., Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Yang, G., James, R. B., Lee, W., Cui, Y., and Burger, A. Research Update: Point defects in CdTe{sub x}Se{sub 1−x} crystals grown from a Te-rich solution for applications in detecting radiation. United States: N. p., 2015.
Web. doi:10.1063/1.4917270.
Gul, R., Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Yang, G., James, R. B., Lee, W., Cui, Y., & Burger, A. Research Update: Point defects in CdTe{sub x}Se{sub 1−x} crystals grown from a Te-rich solution for applications in detecting radiation. United States. https://doi.org/10.1063/1.4917270
Gul, R., Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Yang, G., James, R. B., Lee, W., Cui, Y., and Burger, A. 2015.
"Research Update: Point defects in CdTe{sub x}Se{sub 1−x} crystals grown from a Te-rich solution for applications in detecting radiation". United States. https://doi.org/10.1063/1.4917270.
@article{osti_22415264,
title = {Research Update: Point defects in CdTe{sub x}Se{sub 1−x} crystals grown from a Te-rich solution for applications in detecting radiation},
author = {Gul, R. and Roy, U. N. and Bolotnikov, A. E. and Camarda, G. S. and Cui, Y. and Hossain, A. and Yang, G. and James, R. B. and Lee, W. and Cui, Y. and Burger, A.},
abstractNote = {We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.},
doi = {10.1063/1.4917270},
url = {https://www.osti.gov/biblio/22415264},
journal = {APL materials},
issn = {2166-532X},
number = 4,
volume = 3,
place = {United States},
year = {Wed Apr 01 00:00:00 EDT 2015},
month = {Wed Apr 01 00:00:00 EDT 2015}
}
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Works referenced in this record:
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Works referencing / citing this record:
An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers
journal, March 2017
- Gul, R.; Roy, U. N.; James, R. B.
- Journal of Applied Physics, Vol. 121, Issue 11