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Title: High compositional homogeneity of CdTe{sub x}Se{sub 1−x} crystals grown by the Bridgman method

Abstract

We obtained high-quality CdTe{sub x}Se{sub 1−x} (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ∼1.0. This high uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional Cd{sub x}Zn{sub 1−x}Te (CdZnTe or CZT)

Authors:
; ; ; ; ; ; ; ;  [1]; ;  [1];  [2]
  1. Brookhaven National Laboratory, Upton, New York 11973 (United States)
  2. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22415251
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 3; Journal Issue: 2; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BRIDGMAN METHOD; CADMIUM SELENIDES; CADMIUM TELLURIDES; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; CRYSTALS; GAMMA RADIATION; RADIATION DETECTORS; SEGREGATION; SUBSTRATES; X-RAY FLUORESCENCE ANALYSIS; ZINC TELLURIDES

Citation Formats

Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Tappero, R., Yang, G., Gul, R., James, R. B., Lee, K., Lee, W., and Korea University, Seoul 136-103. High compositional homogeneity of CdTe{sub x}Se{sub 1−x} crystals grown by the Bridgman method. United States: N. p., 2015. Web. doi:10.1063/1.4907250.
Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Tappero, R., Yang, G., Gul, R., James, R. B., Lee, K., Lee, W., & Korea University, Seoul 136-103. High compositional homogeneity of CdTe{sub x}Se{sub 1−x} crystals grown by the Bridgman method. United States. doi:10.1063/1.4907250.
Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Tappero, R., Yang, G., Gul, R., James, R. B., Lee, K., Lee, W., and Korea University, Seoul 136-103. Sun . "High compositional homogeneity of CdTe{sub x}Se{sub 1−x} crystals grown by the Bridgman method". United States. doi:10.1063/1.4907250.
@article{osti_22415251,
title = {High compositional homogeneity of CdTe{sub x}Se{sub 1−x} crystals grown by the Bridgman method},
author = {Roy, U. N. and Bolotnikov, A. E. and Camarda, G. S. and Cui, Y. and Hossain, A. and Tappero, R. and Yang, G. and Gul, R. and James, R. B. and Lee, K. and Lee, W. and Korea University, Seoul 136-103},
abstractNote = {We obtained high-quality CdTe{sub x}Se{sub 1−x} (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ∼1.0. This high uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional Cd{sub x}Zn{sub 1−x}Te (CdZnTe or CZT)},
doi = {10.1063/1.4907250},
journal = {APL materials},
number = 2,
volume = 3,
place = {United States},
year = {Sun Feb 01 00:00:00 EST 2015},
month = {Sun Feb 01 00:00:00 EST 2015}
}