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Title: Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates

Abstract

We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of graphene nanoribbons (GNRs), the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors and remain potential candidates for electronic switching devices.

Authors:
 [1];  [2]; ; ; ; ;  [1];  [3];  [4]; ; ; ;  [3];  [5];  [6]
  1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  2. (Korea, Republic of)
  3. U. S. Naval Research Laboratory, Washington, DC 20375 (United States)
  4. (United States)
  5. Materials Science and Engineering and Center of 2D and Layered Materials, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  6. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
Publication Date:
OSTI Identifier:
22415235
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 3; Journal Issue: 1; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC CONDUCTIVITY; ELECTROSTATICS; ENERGY GAP; EPITAXY; EV RANGE; FIELD EFFECT TRANSISTORS; GRAPHENE; NANOSTRUCTURES; ROUGHNESS; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SUBSTRATES; TEMPERATURE DEPENDENCE; THERMIONIC EMISSION; TUNNEL EFFECT

Citation Formats

Hwang, Wan Sik, E-mail: whwang@kau.ac.kr, E-mail: djena@nd.edu, Department of Materials Engineering, Korea Aerospace University, Goyang City, Gyeonggi-do 412791, Zhao, Pei, Tahy, Kristof, Xing, Huili, Seabaugh, Alan, Jena, Debdeep, E-mail: whwang@kau.ac.kr, E-mail: djena@nd.edu, Nyakiti, Luke O., Department of Materials Science and Engineering, Texas A and M University, College Station, Texas 77843, Wheeler, Virginia D., Myers-Ward, Rachael L., Eddy, Charles R., Gaskill, D. Kurt, Robinson, Joshua A., and Haensch, Wilfried. Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates. United States: N. p., 2015. Web. doi:10.1063/1.4905155.
Hwang, Wan Sik, E-mail: whwang@kau.ac.kr, E-mail: djena@nd.edu, Department of Materials Engineering, Korea Aerospace University, Goyang City, Gyeonggi-do 412791, Zhao, Pei, Tahy, Kristof, Xing, Huili, Seabaugh, Alan, Jena, Debdeep, E-mail: whwang@kau.ac.kr, E-mail: djena@nd.edu, Nyakiti, Luke O., Department of Materials Science and Engineering, Texas A and M University, College Station, Texas 77843, Wheeler, Virginia D., Myers-Ward, Rachael L., Eddy, Charles R., Gaskill, D. Kurt, Robinson, Joshua A., & Haensch, Wilfried. Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates. United States. doi:10.1063/1.4905155.
Hwang, Wan Sik, E-mail: whwang@kau.ac.kr, E-mail: djena@nd.edu, Department of Materials Engineering, Korea Aerospace University, Goyang City, Gyeonggi-do 412791, Zhao, Pei, Tahy, Kristof, Xing, Huili, Seabaugh, Alan, Jena, Debdeep, E-mail: whwang@kau.ac.kr, E-mail: djena@nd.edu, Nyakiti, Luke O., Department of Materials Science and Engineering, Texas A and M University, College Station, Texas 77843, Wheeler, Virginia D., Myers-Ward, Rachael L., Eddy, Charles R., Gaskill, D. Kurt, Robinson, Joshua A., and Haensch, Wilfried. Thu . "Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates". United States. doi:10.1063/1.4905155.
@article{osti_22415235,
title = {Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates},
author = {Hwang, Wan Sik, E-mail: whwang@kau.ac.kr, E-mail: djena@nd.edu and Department of Materials Engineering, Korea Aerospace University, Goyang City, Gyeonggi-do 412791 and Zhao, Pei and Tahy, Kristof and Xing, Huili and Seabaugh, Alan and Jena, Debdeep, E-mail: whwang@kau.ac.kr, E-mail: djena@nd.edu and Nyakiti, Luke O. and Department of Materials Science and Engineering, Texas A and M University, College Station, Texas 77843 and Wheeler, Virginia D. and Myers-Ward, Rachael L. and Eddy, Charles R. and Gaskill, D. Kurt and Robinson, Joshua A. and Haensch, Wilfried},
abstractNote = {We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of graphene nanoribbons (GNRs), the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors and remain potential candidates for electronic switching devices.},
doi = {10.1063/1.4905155},
journal = {APL materials},
number = 1,
volume = 3,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2015},
month = {Thu Jan 01 00:00:00 EST 2015}
}