A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

Journal Article · Sat Nov 01 00:00:00 EDT 2014 · APL materials

DOI:https://doi.org/10.1063/1.4902433· OSTI ID:22415223

Jin, E. N.; Kornblum, L.; Kumah, D. P.; Zou, K.; Walker, F. J. ^[1]; Broadbridge, C. C. ^[1]; Ngai, J. H. ^[2]; Ahn, C. H. ^[1]

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1. Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511 (United States)
2. Department of Physics, The University of Texas at Arlington, Arlington, Texas 76019 (United States)

We present the growth and characterization of layered heterostructures comprised of LaTiO{sub 3} and SrTiO{sub 3} epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO{sub 3}/SrTiO{sub 3} interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 10{sup 14} cm{sup −2} per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies.

• OSTI ID: 22415223
• Journal Information: APL materials, Vol. 2, Issue 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER DENSITY
CHARGE CARRIERS
CRYSTAL GROWTH
ELECTRON GAS
EPITAXY
HETEROJUNCTIONS
INTERFACES
LANTHANUM COMPOUNDS
OXIDES
SILICON
STRONTIUM TITANATES
TWO-DIMENSIONAL SYSTEMS