Erratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105, 193509 (2014)]
- NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi, 243-0198 (Japan)
No abstract prepared.
- OSTI ID:
- 22415217
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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