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Title: Electron transport in endohedral metallofullerene Ce@C{sub 82} single-molecule transistors

Abstract

We have investigated the electron transport in endohedral metallofullerene Ce@C{sub 82} single-molecule transistors (SMTs) together with that in reference C{sub 84} SMTs. The vibrational modes (bending and stretching) of the encapsulated single Ce atom in the C{sub 82} cage appear in Coulomb stability diagrams for the single-electron tunneling through Ce@C{sub 82} molecules, demonstrating the single-atom sensitivity of the transport measurements. When a bias voltage larger than 100 mV is applied across the source/drain electrodes, large hysteretic behavior is observed in the current-voltage (I-V) characteristics. At the same time, the pattern in the Coulomb stability diagram is changed. No such hysteretic behavior is observed in the I-V curves of hollow-cage C{sub 84} SMTs, even when the bias voltage exceeds 500 mV. This hysteretic change in the I-V characteristics is induced by a nanomechanical change in the configuration of the Ce@C{sub 82} molecule in the nanogap electrode due to the electric dipole that exists in Ce@C{sub 82}.

Authors:
; ;  [1];  [1];  [2]
  1. Center for Photonics Electronics Convergence, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22415208
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CERIUM; ELECTRIC CONDUCTIVITY; ELECTRIC DIPOLES; ELECTRONS; FULLERENES; NANOSTRUCTURES; TRANSISTORS; TUNNEL EFFECT

Citation Formats

Okamura, Naoya, Yoshida, Kenji, Sakata, Shuichi, Hirakawa, Kazuhiko, E-mail: hirakawa@iis.u-tokyo.ac.jp, and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505. Electron transport in endohedral metallofullerene Ce@C{sub 82} single-molecule transistors. United States: N. p., 2015. Web. doi:10.1063/1.4907009.
Okamura, Naoya, Yoshida, Kenji, Sakata, Shuichi, Hirakawa, Kazuhiko, E-mail: hirakawa@iis.u-tokyo.ac.jp, & Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505. Electron transport in endohedral metallofullerene Ce@C{sub 82} single-molecule transistors. United States. doi:10.1063/1.4907009.
Okamura, Naoya, Yoshida, Kenji, Sakata, Shuichi, Hirakawa, Kazuhiko, E-mail: hirakawa@iis.u-tokyo.ac.jp, and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505. Mon . "Electron transport in endohedral metallofullerene Ce@C{sub 82} single-molecule transistors". United States. doi:10.1063/1.4907009.
@article{osti_22415208,
title = {Electron transport in endohedral metallofullerene Ce@C{sub 82} single-molecule transistors},
author = {Okamura, Naoya and Yoshida, Kenji and Sakata, Shuichi and Hirakawa, Kazuhiko, E-mail: hirakawa@iis.u-tokyo.ac.jp and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505},
abstractNote = {We have investigated the electron transport in endohedral metallofullerene Ce@C{sub 82} single-molecule transistors (SMTs) together with that in reference C{sub 84} SMTs. The vibrational modes (bending and stretching) of the encapsulated single Ce atom in the C{sub 82} cage appear in Coulomb stability diagrams for the single-electron tunneling through Ce@C{sub 82} molecules, demonstrating the single-atom sensitivity of the transport measurements. When a bias voltage larger than 100 mV is applied across the source/drain electrodes, large hysteretic behavior is observed in the current-voltage (I-V) characteristics. At the same time, the pattern in the Coulomb stability diagram is changed. No such hysteretic behavior is observed in the I-V curves of hollow-cage C{sub 84} SMTs, even when the bias voltage exceeds 500 mV. This hysteretic change in the I-V characteristics is induced by a nanomechanical change in the configuration of the Ce@C{sub 82} molecule in the nanogap electrode due to the electric dipole that exists in Ce@C{sub 82}.},
doi = {10.1063/1.4907009},
journal = {Applied Physics Letters},
number = 4,
volume = 106,
place = {United States},
year = {Mon Jan 26 00:00:00 EST 2015},
month = {Mon Jan 26 00:00:00 EST 2015}
}