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Title: Formation of multilayered magnetic nanotracks with perpendicular anisotropy via deoxidization using ion irradiation on ultraviolet-imprinted intaglio nanostructures

Abstract

We proposed a method to fabricate perpendicular magnetic nanotracks in the cobalt oxide/palladium multilayer films using UV-nanoimprinting lithography and low-energy hydrogen-ion irradiation. This is a method to magnetize UV-imprinted intaglio nanotracks via low-energy hydrogen ion irradiation, resulting the irradiated region are magnetically separated from the non-irradiated region. Multilayered magnetic nanotracks with a line width of 140 nm, which were fabricated by this parallel process without additional dry etching process, exhibited a saturation magnetization of 290 emu cm{sup −3} and a coercivity of 2 kOe. This study demonstrates a cost-effective mass production of multilayered perpendicular magnetic nanotracks and offers the possibility to achieve high density storage and memory devices.

Authors:
; ; ; ; ;  [1]; ;  [2]
  1. School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)
  2. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22415205
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; COBALT OXIDES; HYDROGEN IONS; IRRADIATION; LAYERS; MAGNETIZATION; MEMORY DEVICES; NANOSTRUCTURES; PALLADIUM; ULTRAVIOLET RADIATION

Citation Formats

Cho, Eikhyun, Shin, Sang Chul, Han, Jungjin, Shim, Jongmyeong, Shin, Ryung, Kang, Shinill, E-mail: snlkang@yonsei.ac.kr, Kim, Sanghoon, and Hong, Jongill. Formation of multilayered magnetic nanotracks with perpendicular anisotropy via deoxidization using ion irradiation on ultraviolet-imprinted intaglio nanostructures. United States: N. p., 2015. Web. doi:10.1063/1.4906901.
Cho, Eikhyun, Shin, Sang Chul, Han, Jungjin, Shim, Jongmyeong, Shin, Ryung, Kang, Shinill, E-mail: snlkang@yonsei.ac.kr, Kim, Sanghoon, & Hong, Jongill. Formation of multilayered magnetic nanotracks with perpendicular anisotropy via deoxidization using ion irradiation on ultraviolet-imprinted intaglio nanostructures. United States. doi:10.1063/1.4906901.
Cho, Eikhyun, Shin, Sang Chul, Han, Jungjin, Shim, Jongmyeong, Shin, Ryung, Kang, Shinill, E-mail: snlkang@yonsei.ac.kr, Kim, Sanghoon, and Hong, Jongill. Mon . "Formation of multilayered magnetic nanotracks with perpendicular anisotropy via deoxidization using ion irradiation on ultraviolet-imprinted intaglio nanostructures". United States. doi:10.1063/1.4906901.
@article{osti_22415205,
title = {Formation of multilayered magnetic nanotracks with perpendicular anisotropy via deoxidization using ion irradiation on ultraviolet-imprinted intaglio nanostructures},
author = {Cho, Eikhyun and Shin, Sang Chul and Han, Jungjin and Shim, Jongmyeong and Shin, Ryung and Kang, Shinill, E-mail: snlkang@yonsei.ac.kr and Kim, Sanghoon and Hong, Jongill},
abstractNote = {We proposed a method to fabricate perpendicular magnetic nanotracks in the cobalt oxide/palladium multilayer films using UV-nanoimprinting lithography and low-energy hydrogen-ion irradiation. This is a method to magnetize UV-imprinted intaglio nanotracks via low-energy hydrogen ion irradiation, resulting the irradiated region are magnetically separated from the non-irradiated region. Multilayered magnetic nanotracks with a line width of 140 nm, which were fabricated by this parallel process without additional dry etching process, exhibited a saturation magnetization of 290 emu cm{sup −3} and a coercivity of 2 kOe. This study demonstrates a cost-effective mass production of multilayered perpendicular magnetic nanotracks and offers the possibility to achieve high density storage and memory devices.},
doi = {10.1063/1.4906901},
journal = {Applied Physics Letters},
number = 4,
volume = 106,
place = {United States},
year = {Mon Jan 26 00:00:00 EST 2015},
month = {Mon Jan 26 00:00:00 EST 2015}
}