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Title: A pseudo-single-crystalline germanium film for flexible electronics

Abstract

We demonstrate large-area (∼600 μm), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 °C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al{sub 2}O{sub 3} barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel.

Authors:
; ; ;  [1]; ; ;  [2]; ; ; ;  [3]
  1. Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)
  2. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
  3. Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan)
Publication Date:
OSTI Identifier:
22415185
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM; ALUMINIUM OXIDES; CRYSTALLIZATION; GERMANIUM; GOLD; LAYERS; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS

Citation Formats

Higashi, H., Yamada, S., Kanashima, T., Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp, Kasahara, K., Park, J.-H., Miyao, M., Kudo, K., Okamoto, H., Moto, K., and Tsunoda, I. A pseudo-single-crystalline germanium film for flexible electronics. United States: N. p., 2015. Web. doi:10.1063/1.4906612.
Higashi, H., Yamada, S., Kanashima, T., Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp, Kasahara, K., Park, J.-H., Miyao, M., Kudo, K., Okamoto, H., Moto, K., & Tsunoda, I. A pseudo-single-crystalline germanium film for flexible electronics. United States. doi:10.1063/1.4906612.
Higashi, H., Yamada, S., Kanashima, T., Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp, Kasahara, K., Park, J.-H., Miyao, M., Kudo, K., Okamoto, H., Moto, K., and Tsunoda, I. Mon . "A pseudo-single-crystalline germanium film for flexible electronics". United States. doi:10.1063/1.4906612.
@article{osti_22415185,
title = {A pseudo-single-crystalline germanium film for flexible electronics},
author = {Higashi, H. and Yamada, S. and Kanashima, T. and Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp and Kasahara, K. and Park, J.-H. and Miyao, M. and Kudo, K. and Okamoto, H. and Moto, K. and Tsunoda, I.},
abstractNote = {We demonstrate large-area (∼600 μm), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 °C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al{sub 2}O{sub 3} barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel.},
doi = {10.1063/1.4906612},
journal = {Applied Physics Letters},
number = 4,
volume = 106,
place = {United States},
year = {Mon Jan 26 00:00:00 EST 2015},
month = {Mon Jan 26 00:00:00 EST 2015}
}