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Title: Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Abstract

We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

Authors:
; ; ; ; ; ;  [1]; ; ; ; ;  [2]
  1. Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250 (United States)
  2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)
Publication Date:
OSTI Identifier:
22415176
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; ELECTRONIC STRUCTURE; OPTICAL PUMPING; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM WELLS; SAPPHIRE; SILICON CARBIDES; STIMULATED EMISSION; SUBSTRATES; ULTRAVIOLET RADIATION

Citation Formats

Li, Xiao-Hang, E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu, Kao, Tsung-Ting, Satter, Md. Mahbub, Shen, Shyh-Chiang, Yoder, P. Douglas, Detchprohm, Theeradetch, Dupuis, Russell D., E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu, Wei, Yong O., Wang, Shuo, Xie, Hongen, Fischer, Alec M., and Ponce, Fernando A. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate. United States: N. p., 2015. Web. doi:10.1063/1.4906590.
Li, Xiao-Hang, E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu, Kao, Tsung-Ting, Satter, Md. Mahbub, Shen, Shyh-Chiang, Yoder, P. Douglas, Detchprohm, Theeradetch, Dupuis, Russell D., E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu, Wei, Yong O., Wang, Shuo, Xie, Hongen, Fischer, Alec M., & Ponce, Fernando A. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate. United States. doi:10.1063/1.4906590.
Li, Xiao-Hang, E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu, Kao, Tsung-Ting, Satter, Md. Mahbub, Shen, Shyh-Chiang, Yoder, P. Douglas, Detchprohm, Theeradetch, Dupuis, Russell D., E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu, Wei, Yong O., Wang, Shuo, Xie, Hongen, Fischer, Alec M., and Ponce, Fernando A. Mon . "Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate". United States. doi:10.1063/1.4906590.
@article{osti_22415176,
title = {Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate},
author = {Li, Xiao-Hang, E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu and Kao, Tsung-Ting and Satter, Md. Mahbub and Shen, Shyh-Chiang and Yoder, P. Douglas and Detchprohm, Theeradetch and Dupuis, Russell D., E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu and Wei, Yong O. and Wang, Shuo and Xie, Hongen and Fischer, Alec M. and Ponce, Fernando A.},
abstractNote = {We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.},
doi = {10.1063/1.4906590},
journal = {Applied Physics Letters},
number = 4,
volume = 106,
place = {United States},
year = {Mon Jan 26 00:00:00 EST 2015},
month = {Mon Jan 26 00:00:00 EST 2015}
}