High-Q silicon carbide photonic-crystal cavities

Journal Article · Mon Jan 26 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4906923· OSTI ID:22415168

Lee, Jonathan Y. ^[1]; Lu, Xiyuan ^[2]; Lin, Qiang ^[1]

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1. Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States)
2. Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States)

We demonstrate one-dimensional photonic-crystal nanobeam cavities in amorphous silicon carbide. The fundamental mode exhibits intrinsic optical quality factor as high as 7.69 × 10{sup 4} with mode volume ∼0.60(λ/n){sup 3} at wavelength 1.5 μm. A corresponding Purcell factor value of ∼10{sup 4} is the highest reported to date in silicon carbide optical cavities. The device exhibits great potential for integrated nonlinear photonics and cavity nano-optomechanics.

• OSTI ID: 22415168
• Journal Information: Applied Physics Letters, Vol. 106, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL DEFECTS
CRYSTALS
NANOSTRUCTURES
NONLINEAR PROBLEMS
QUALITY FACTOR
SILICON CARBIDES