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Title: Mushroom plasmonic metamaterial infrared absorbers

Abstract

There has been a considerable amount of interest in the development of various types of electromagnetic wave absorbers for use in different wavelength ranges. In particular, infrared (IR) absorbers with wavelength selectivity can be applied to advanced uncooled IR sensors, which would be capable of identifying objects through their radiation spectrum. In the present study, mushroom plasmonic metamaterial absorbers (MPMAs) for the IR wavelength region were designed and fabricated. The MPMAs consist of a periodic array of thin metal micropatches connected to a thin metal plate with narrow silicon (Si) posts. A Si post height of 200 nm was achieved by isotropic XeF{sub 2} etching of a thin Si layer sandwiched between metal plates. This fabrication procedure is relatively simple and is consistent with complementary metal oxide semiconductor technology. The absorption spectra of the fabricated MPMAs were experimentally measured. In addition, theoretical calculations of their absorption properties were conducted using rigorous coupled wave analysis. Both the calculated and measured absorbance results demonstrated that these MPMAs can realize strong selective absorption at wavelengths beyond the period of the array by varying the micropatch width. Absorbance values greater than 90% were achieved. Dual- or single-mode absorption can also be selected by varying themore » width of the Si posts. Pixel structures using such MPMAs could be used as high responsivity, high resolution and fast uncooled IR sensors.« less

Authors:
; ; ; ;  [1];  [2]
  1. Advanced Technology R and D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661 (Japan)
  2. College of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)
Publication Date:
OSTI Identifier:
22415167
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ELECTROMAGNETIC RADIATION; ETCHING; INFRARED SPECTRA; LAYERS; SEMICONDUCTOR MATERIALS; SILICON; XENON FLUORIDES

Citation Formats

Ogawa, Shinpei, E-mail: Ogawa.Shimpei@eb.MitsubishiElectric.co.jp, Fujisawa, Daisuke, Hata, Hisatoshi, Uetsuki, Mitsuharu, Misaki, Koji, and Kimata, Masafumi. Mushroom plasmonic metamaterial infrared absorbers. United States: N. p., 2015. Web. doi:10.1063/1.4906860.
Ogawa, Shinpei, E-mail: Ogawa.Shimpei@eb.MitsubishiElectric.co.jp, Fujisawa, Daisuke, Hata, Hisatoshi, Uetsuki, Mitsuharu, Misaki, Koji, & Kimata, Masafumi. Mushroom plasmonic metamaterial infrared absorbers. United States. doi:10.1063/1.4906860.
Ogawa, Shinpei, E-mail: Ogawa.Shimpei@eb.MitsubishiElectric.co.jp, Fujisawa, Daisuke, Hata, Hisatoshi, Uetsuki, Mitsuharu, Misaki, Koji, and Kimata, Masafumi. Mon . "Mushroom plasmonic metamaterial infrared absorbers". United States. doi:10.1063/1.4906860.
@article{osti_22415167,
title = {Mushroom plasmonic metamaterial infrared absorbers},
author = {Ogawa, Shinpei, E-mail: Ogawa.Shimpei@eb.MitsubishiElectric.co.jp and Fujisawa, Daisuke and Hata, Hisatoshi and Uetsuki, Mitsuharu and Misaki, Koji and Kimata, Masafumi},
abstractNote = {There has been a considerable amount of interest in the development of various types of electromagnetic wave absorbers for use in different wavelength ranges. In particular, infrared (IR) absorbers with wavelength selectivity can be applied to advanced uncooled IR sensors, which would be capable of identifying objects through their radiation spectrum. In the present study, mushroom plasmonic metamaterial absorbers (MPMAs) for the IR wavelength region were designed and fabricated. The MPMAs consist of a periodic array of thin metal micropatches connected to a thin metal plate with narrow silicon (Si) posts. A Si post height of 200 nm was achieved by isotropic XeF{sub 2} etching of a thin Si layer sandwiched between metal plates. This fabrication procedure is relatively simple and is consistent with complementary metal oxide semiconductor technology. The absorption spectra of the fabricated MPMAs were experimentally measured. In addition, theoretical calculations of their absorption properties were conducted using rigorous coupled wave analysis. Both the calculated and measured absorbance results demonstrated that these MPMAs can realize strong selective absorption at wavelengths beyond the period of the array by varying the micropatch width. Absorbance values greater than 90% were achieved. Dual- or single-mode absorption can also be selected by varying the width of the Si posts. Pixel structures using such MPMAs could be used as high responsivity, high resolution and fast uncooled IR sensors.},
doi = {10.1063/1.4906860},
journal = {Applied Physics Letters},
number = 4,
volume = 106,
place = {United States},
year = {Mon Jan 26 00:00:00 EST 2015},
month = {Mon Jan 26 00:00:00 EST 2015}
}