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Title: Negative differential transconductance in electrolyte-gated ruthenate

Abstract

We report on a study of electric field-induced doping of the highly conductive ruthenate SrRuO{sub 3} using an ionic liquid as the gate dielectric in a field-effect transistor configuration. Two distinct carrier transport regimes are identified for increasing positive gate voltage in thin (10 nm) films grown heteroepitaxially on SrTiO{sub 3} substrates. For V{sub g} = 2 V and lower, the sample shows an increased conductivity of up to 13%, as might be expected for electron doping of a metal. At higher V{sub g} = 2.5 V, we observe a large decrease in electrical conductivity of >20% (at 4.2 K) due to the prevalence of strongly blocked conduction pathways.

Authors:
 [1];  [2];  [1];  [3];  [4]
  1. Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
  2. (Pakistan)
  3. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)
  4. (New Zealand)
Publication Date:
OSTI Identifier:
22415160
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTROLYTES; FIELD EFFECT TRANSISTORS; METALS; STRONTIUM TITANATES; SUBSTRATES

Citation Formats

Hassan, Muhammad Umair, Center for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Park Road, Shehzad Town 44000, Islamabad, Dhoot, Anoop Singh, E-mail: asd24@cam.ac.uk, Wimbush, Stuart C., and The MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington, P.O. Box 600, Wellington 6140. Negative differential transconductance in electrolyte-gated ruthenate. United States: N. p., 2015. Web. doi:10.1063/1.4906534.
Hassan, Muhammad Umair, Center for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Park Road, Shehzad Town 44000, Islamabad, Dhoot, Anoop Singh, E-mail: asd24@cam.ac.uk, Wimbush, Stuart C., & The MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington, P.O. Box 600, Wellington 6140. Negative differential transconductance in electrolyte-gated ruthenate. United States. doi:10.1063/1.4906534.
Hassan, Muhammad Umair, Center for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Park Road, Shehzad Town 44000, Islamabad, Dhoot, Anoop Singh, E-mail: asd24@cam.ac.uk, Wimbush, Stuart C., and The MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington, P.O. Box 600, Wellington 6140. Mon . "Negative differential transconductance in electrolyte-gated ruthenate". United States. doi:10.1063/1.4906534.
@article{osti_22415160,
title = {Negative differential transconductance in electrolyte-gated ruthenate},
author = {Hassan, Muhammad Umair and Center for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Park Road, Shehzad Town 44000, Islamabad and Dhoot, Anoop Singh, E-mail: asd24@cam.ac.uk and Wimbush, Stuart C. and The MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington, P.O. Box 600, Wellington 6140},
abstractNote = {We report on a study of electric field-induced doping of the highly conductive ruthenate SrRuO{sub 3} using an ionic liquid as the gate dielectric in a field-effect transistor configuration. Two distinct carrier transport regimes are identified for increasing positive gate voltage in thin (10 nm) films grown heteroepitaxially on SrTiO{sub 3} substrates. For V{sub g} = 2 V and lower, the sample shows an increased conductivity of up to 13%, as might be expected for electron doping of a metal. At higher V{sub g} = 2.5 V, we observe a large decrease in electrical conductivity of >20% (at 4.2 K) due to the prevalence of strongly blocked conduction pathways.},
doi = {10.1063/1.4906534},
journal = {Applied Physics Letters},
number = 3,
volume = 106,
place = {United States},
year = {Mon Jan 19 00:00:00 EST 2015},
month = {Mon Jan 19 00:00:00 EST 2015}
}