skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Dependence of inverse-spin Hall effect and spin-rectified voltage on tantalum thickness in Ta/CoFeB bilayer structure

Abstract

Ta-layer thickness (t{sub Ta}) dependence of the measured DC voltage V from the inverse-spin Hall effect (ISHE) in Ta/CoFeB bilayer structure is experimentally investigated using the ferromagnetic resonance in the TE{sub 011} resonant cavity. The ISHE signals excluding the spin-rectified effect (SRE) were separated from the fitted curve of V against t{sub Ta}. For t{sub Ta} ≈ λ{sub Ta} (Ta-spin diffusion length = 2.7 nm), the deviation in ISHE voltage V{sub ISH} between the experimental and theoretical values is significantly increased because of the large SRE contribution, which also results in a large deviation in the spin Hall angle θ{sub SH} (from 10% to 40%). However, when t{sub Ta} ≫ λ{sub Ta}, the V{sub ISH} values are consistent with theoretical values because the SRE terms become negligible, which subsequently improves the accuracy of the obtained θ{sub SH} within 4% deviation. The results will provide an outline for an accurate estimation of the θ{sub SH} for materials with small λ value, which would be useful for utilizing the spin Hall effect in a 3-terminal spintronic devices in which magnetization can be controlled by in-plane current.

Authors:
; ;  [1]; ;  [2]
  1. Division of Materials Science, Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of)
  2. Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22415146
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COBALT COMPOUNDS; FERROMAGNETIC RESONANCE; HALL EFFECT; IRON BORIDES; LAYERS; MAGNETIZATION; SPIN; TANTALUM; THICKNESS

Citation Formats

Kim, Sang-Il, Seo, Min-Su, Park, Seung-Young, E-mail: parksy@kbsi.re.kr, Kim, Dong-Jun, and Park, Byong-Guk, E-mail: bgpark@kaist.ac.kr. Dependence of inverse-spin Hall effect and spin-rectified voltage on tantalum thickness in Ta/CoFeB bilayer structure. United States: N. p., 2015. Web. doi:10.1063/1.4906487.
Kim, Sang-Il, Seo, Min-Su, Park, Seung-Young, E-mail: parksy@kbsi.re.kr, Kim, Dong-Jun, & Park, Byong-Guk, E-mail: bgpark@kaist.ac.kr. Dependence of inverse-spin Hall effect and spin-rectified voltage on tantalum thickness in Ta/CoFeB bilayer structure. United States. doi:10.1063/1.4906487.
Kim, Sang-Il, Seo, Min-Su, Park, Seung-Young, E-mail: parksy@kbsi.re.kr, Kim, Dong-Jun, and Park, Byong-Guk, E-mail: bgpark@kaist.ac.kr. Mon . "Dependence of inverse-spin Hall effect and spin-rectified voltage on tantalum thickness in Ta/CoFeB bilayer structure". United States. doi:10.1063/1.4906487.
@article{osti_22415146,
title = {Dependence of inverse-spin Hall effect and spin-rectified voltage on tantalum thickness in Ta/CoFeB bilayer structure},
author = {Kim, Sang-Il and Seo, Min-Su and Park, Seung-Young, E-mail: parksy@kbsi.re.kr and Kim, Dong-Jun and Park, Byong-Guk, E-mail: bgpark@kaist.ac.kr},
abstractNote = {Ta-layer thickness (t{sub Ta}) dependence of the measured DC voltage V from the inverse-spin Hall effect (ISHE) in Ta/CoFeB bilayer structure is experimentally investigated using the ferromagnetic resonance in the TE{sub 011} resonant cavity. The ISHE signals excluding the spin-rectified effect (SRE) were separated from the fitted curve of V against t{sub Ta}. For t{sub Ta} ≈ λ{sub Ta} (Ta-spin diffusion length = 2.7 nm), the deviation in ISHE voltage V{sub ISH} between the experimental and theoretical values is significantly increased because of the large SRE contribution, which also results in a large deviation in the spin Hall angle θ{sub SH} (from 10% to 40%). However, when t{sub Ta} ≫ λ{sub Ta}, the V{sub ISH} values are consistent with theoretical values because the SRE terms become negligible, which subsequently improves the accuracy of the obtained θ{sub SH} within 4% deviation. The results will provide an outline for an accurate estimation of the θ{sub SH} for materials with small λ value, which would be useful for utilizing the spin Hall effect in a 3-terminal spintronic devices in which magnetization can be controlled by in-plane current.},
doi = {10.1063/1.4906487},
journal = {Applied Physics Letters},
number = 3,
volume = 106,
place = {United States},
year = {Mon Jan 19 00:00:00 EST 2015},
month = {Mon Jan 19 00:00:00 EST 2015}
}