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Title: Plasma enhanced multistate storage capability of single ZnO nanowire based memory

Abstract

Multiple-state storage (MSS) is common for resistive random access memory, but the effects of plasma treatment on the MSS and the switching properties have been scarcely investigated. We have demonstrated a stable four-state storage capability of single zinc oxide nanowire (ZnO NW) treated by argon plasma. The electrical switching is attributed to the electron trapping and detrapping from the oxygen vacancies (V{sub o}s). The MSS relates to the electrical-thermal induced distribution of the V{sub o}s which determines electron transport behavior to show different resistance states. Additionally, programming (set and reset) voltages decrease with plasma treatment due to the thickness modulation of the interface barrier.

Authors:
; ; ; ;  [1]
  1. School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108 (China)
Publication Date:
OSTI Identifier:
22415128
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ARGON; MEMORY DEVICES; NANOWIRES; OXYGEN; PLASMA; TRAPPED ELECTRONS; VACANCIES; ZINC OXIDES

Citation Formats

Lai, Yunfeng, E-mail: Yunfeng.lai@fzu.edu.cn, Xin, Pucong, Cheng, Shuying, Yu, Jinling, and Zheng, Qiao. Plasma enhanced multistate storage capability of single ZnO nanowire based memory. United States: N. p., 2015. Web. doi:10.1063/1.4906416.
Lai, Yunfeng, E-mail: Yunfeng.lai@fzu.edu.cn, Xin, Pucong, Cheng, Shuying, Yu, Jinling, & Zheng, Qiao. Plasma enhanced multistate storage capability of single ZnO nanowire based memory. United States. doi:10.1063/1.4906416.
Lai, Yunfeng, E-mail: Yunfeng.lai@fzu.edu.cn, Xin, Pucong, Cheng, Shuying, Yu, Jinling, and Zheng, Qiao. Mon . "Plasma enhanced multistate storage capability of single ZnO nanowire based memory". United States. doi:10.1063/1.4906416.
@article{osti_22415128,
title = {Plasma enhanced multistate storage capability of single ZnO nanowire based memory},
author = {Lai, Yunfeng, E-mail: Yunfeng.lai@fzu.edu.cn and Xin, Pucong and Cheng, Shuying and Yu, Jinling and Zheng, Qiao},
abstractNote = {Multiple-state storage (MSS) is common for resistive random access memory, but the effects of plasma treatment on the MSS and the switching properties have been scarcely investigated. We have demonstrated a stable four-state storage capability of single zinc oxide nanowire (ZnO NW) treated by argon plasma. The electrical switching is attributed to the electron trapping and detrapping from the oxygen vacancies (V{sub o}s). The MSS relates to the electrical-thermal induced distribution of the V{sub o}s which determines electron transport behavior to show different resistance states. Additionally, programming (set and reset) voltages decrease with plasma treatment due to the thickness modulation of the interface barrier.},
doi = {10.1063/1.4906416},
journal = {Applied Physics Letters},
number = 3,
volume = 106,
place = {United States},
year = {Mon Jan 19 00:00:00 EST 2015},
month = {Mon Jan 19 00:00:00 EST 2015}
}