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Title: Identification of titanium-hydrogen complexes with up to four hydrogen atoms in silicon

Abstract

Using high-resolution Laplace deep level transient spectroscopy studies, several TiH-related complexes (E40′, E170, E170′, and E260) were observed in wet-chemically etched and H-plasma treated n-type Si. We assign E40′ and E170 to two different configurations of Ti with one H atom. Both of them are shown to behave as single donor states with an activation enthalpy of E{sub C} − 0.07 eV (E40′) and E{sub C} − 0.34 eV (E170) in the upper half of Si. E170′ with an activation energy of E{sub C} − 0.37 eV is correlated with the donor state of the Ti{sub i}H{sub 2} defect, whereas E260 is attributed to the donor state of Ti{sub i}H{sub 3}. Besides the TiH defects, the presence of electrically inactive TiH{sub 4} is reported. No titanium-hydrogen-related levels were observed in p-type Si.

Authors:
; ;  [1]
  1. Technische Universität Dresden, 01062 Dresden (Germany)
Publication Date:
OSTI Identifier:
22413195
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENTHALPY; EV RANGE; HYDROGEN COMPLEXES; N-TYPE CONDUCTORS; PLASMA; RESOLUTION; SILICON; TITANIUM; TITANIUM HYDRIDES

Citation Formats

Scheffler, L., Kolkovsky, Vl., E-mail: kolkov@ifpan.edu.pl, and Weber, J. Identification of titanium-hydrogen complexes with up to four hydrogen atoms in silicon. United States: N. p., 2015. Web. doi:10.1063/1.4913524.
Scheffler, L., Kolkovsky, Vl., E-mail: kolkov@ifpan.edu.pl, & Weber, J. Identification of titanium-hydrogen complexes with up to four hydrogen atoms in silicon. United States. doi:10.1063/1.4913524.
Scheffler, L., Kolkovsky, Vl., E-mail: kolkov@ifpan.edu.pl, and Weber, J. Sat . "Identification of titanium-hydrogen complexes with up to four hydrogen atoms in silicon". United States. doi:10.1063/1.4913524.
@article{osti_22413195,
title = {Identification of titanium-hydrogen complexes with up to four hydrogen atoms in silicon},
author = {Scheffler, L. and Kolkovsky, Vl., E-mail: kolkov@ifpan.edu.pl and Weber, J.},
abstractNote = {Using high-resolution Laplace deep level transient spectroscopy studies, several TiH-related complexes (E40′, E170, E170′, and E260) were observed in wet-chemically etched and H-plasma treated n-type Si. We assign E40′ and E170 to two different configurations of Ti with one H atom. Both of them are shown to behave as single donor states with an activation enthalpy of E{sub C} − 0.07 eV (E40′) and E{sub C} − 0.34 eV (E170) in the upper half of Si. E170′ with an activation energy of E{sub C} − 0.37 eV is correlated with the donor state of the Ti{sub i}H{sub 2} defect, whereas E260 is attributed to the donor state of Ti{sub i}H{sub 3}. Besides the TiH defects, the presence of electrically inactive TiH{sub 4} is reported. No titanium-hydrogen-related levels were observed in p-type Si.},
doi = {10.1063/1.4913524},
journal = {Journal of Applied Physics},
number = 8,
volume = 117,
place = {United States},
year = {Sat Feb 28 00:00:00 EST 2015},
month = {Sat Feb 28 00:00:00 EST 2015}
}