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Title: Enhanced damage buildup in C{sup +}-implanted GaN film studied by a monoenergetic positron beam

Abstract

Wurtzite GaN films grown by hydride vapor phase epitaxy were implanted with 280 keV C{sup +} ions to a dose of 6 × 10{sup 16 }cm{sup −2}. Vacancy-type defects in C{sup +}-implanted GaN were probed using a slow positron beam. The increase of Doppler broadening S parameter to a high value of 1.08–1.09 after implantation indicates introduction of very large vacancy clusters. Post-implantation annealing at temperatures up to 800 °C makes these vacancy clusters to agglomerate into microvoids. The vacancy clusters or microvoids show high thermal stability, and they are only partially removed after annealing up to 1000 °C. The other measurements such as X-ray diffraction, Raman scattering and Photoluminescence all indicate severe damage and even disordered structure induced by C{sup +}-implantation. The disordered lattice shows a partial recovery after annealing above 800 °C. Amorphous regions are observed by high resolution transmission electron microscopy measurement, which directly confirms that amorphization is induced by C{sup +}-implantation. The disordered GaN lattice is possibly due to special feature of carbon impurities, which enhance the damage buildup during implantation.

Authors:
;  [1]; ;  [2]
  1. Department of Physics, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan 430072 (China)
  2. Advanced Science Research Center, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)
Publication Date:
OSTI Identifier:
22413194
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANNEALING; CARBON IONS; DOPPLER BROADENING; EMISSION SPECTRA; FILMS; GALLIUM NITRIDES; HYDRIDES; PHASE STABILITY; PHOTOLUMINESCENCE; POSITRON BEAMS; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION

Citation Formats

Li, X. F., Chen, Z. Q., E-mail: chenzq@whu.edu.cn, Liu, C., Zhang, H. J., and Kawasuso, A. Enhanced damage buildup in C{sup +}-implanted GaN film studied by a monoenergetic positron beam. United States: N. p., 2015. Web. doi:10.1063/1.4913523.
Li, X. F., Chen, Z. Q., E-mail: chenzq@whu.edu.cn, Liu, C., Zhang, H. J., & Kawasuso, A. Enhanced damage buildup in C{sup +}-implanted GaN film studied by a monoenergetic positron beam. United States. https://doi.org/10.1063/1.4913523
Li, X. F., Chen, Z. Q., E-mail: chenzq@whu.edu.cn, Liu, C., Zhang, H. J., and Kawasuso, A. Sat . "Enhanced damage buildup in C{sup +}-implanted GaN film studied by a monoenergetic positron beam". United States. https://doi.org/10.1063/1.4913523.
@article{osti_22413194,
title = {Enhanced damage buildup in C{sup +}-implanted GaN film studied by a monoenergetic positron beam},
author = {Li, X. F. and Chen, Z. Q., E-mail: chenzq@whu.edu.cn and Liu, C. and Zhang, H. J. and Kawasuso, A.},
abstractNote = {Wurtzite GaN films grown by hydride vapor phase epitaxy were implanted with 280 keV C{sup +} ions to a dose of 6 × 10{sup 16 }cm{sup −2}. Vacancy-type defects in C{sup +}-implanted GaN were probed using a slow positron beam. The increase of Doppler broadening S parameter to a high value of 1.08–1.09 after implantation indicates introduction of very large vacancy clusters. Post-implantation annealing at temperatures up to 800 °C makes these vacancy clusters to agglomerate into microvoids. The vacancy clusters or microvoids show high thermal stability, and they are only partially removed after annealing up to 1000 °C. The other measurements such as X-ray diffraction, Raman scattering and Photoluminescence all indicate severe damage and even disordered structure induced by C{sup +}-implantation. The disordered lattice shows a partial recovery after annealing above 800 °C. Amorphous regions are observed by high resolution transmission electron microscopy measurement, which directly confirms that amorphization is induced by C{sup +}-implantation. The disordered GaN lattice is possibly due to special feature of carbon impurities, which enhance the damage buildup during implantation.},
doi = {10.1063/1.4913523},
url = {https://www.osti.gov/biblio/22413194}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 8,
volume = 117,
place = {United States},
year = {2015},
month = {2}
}