Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study

Journal Article · Sat Feb 28 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4913511· OSTI ID:22413173

Pala, M. G., E-mail: [e-mail]; Cresti, A., E-mail: [e-mail] ^[1]; CNRS, IMEP-LAHC, F-38016 Grenoble ^[2]

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1. Univ. Grenoble Alpes, IMEP-LAHC, F-38016 Grenoble (France)
2. (France)

We present a full-quantum approach to investigate self-heating effects in nanoelectronic devices and exploit it to simulate rough nanowire field-effect transistors. Self-heating is found to significantly contribute (up to about 16%) to the degradation of the transistor performances, with an impact that is stronger for stronger roughness. The mechanism at the origin of the enhanced backscattering is the temperature increase due to the thermal conductivity reduction and the consequent increase of electron-phonon coupling.

• OSTI ID: 22413173
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BACKSCATTERING
ELECTRON-PHONON COUPLING
FIELD EFFECT TRANSISTORS
HEATING
NANOELECTRONICS
PERFORMANCE
REDUCTION
ROUGHNESS
SURFACES
TEMPERATURE DEPENDENCE
THERMAL CONDUCTIVITY