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Title: Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study

Abstract

We present a full-quantum approach to investigate self-heating effects in nanoelectronic devices and exploit it to simulate rough nanowire field-effect transistors. Self-heating is found to significantly contribute (up to about 16%) to the degradation of the transistor performances, with an impact that is stronger for stronger roughness. The mechanism at the origin of the enhanced backscattering is the temperature increase due to the thermal conductivity reduction and the consequent increase of electron-phonon coupling.

Authors:
;  [1];  [2]
  1. Univ. Grenoble Alpes, IMEP-LAHC, F-38016 Grenoble (France)
  2. (France)
Publication Date:
OSTI Identifier:
22413173
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BACKSCATTERING; ELECTRON-PHONON COUPLING; FIELD EFFECT TRANSISTORS; HEATING; NANOELECTRONICS; PERFORMANCE; REDUCTION; ROUGHNESS; SURFACES; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY

Citation Formats

Pala, M. G., E-mail: pala@minatec.inpg.fr, Cresti, A., E-mail: crestial@minatec.inpg.fr, and CNRS, IMEP-LAHC, F-38016 Grenoble. Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study. United States: N. p., 2015. Web. doi:10.1063/1.4913511.
Pala, M. G., E-mail: pala@minatec.inpg.fr, Cresti, A., E-mail: crestial@minatec.inpg.fr, & CNRS, IMEP-LAHC, F-38016 Grenoble. Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study. United States. doi:10.1063/1.4913511.
Pala, M. G., E-mail: pala@minatec.inpg.fr, Cresti, A., E-mail: crestial@minatec.inpg.fr, and CNRS, IMEP-LAHC, F-38016 Grenoble. Sat . "Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study". United States. doi:10.1063/1.4913511.
@article{osti_22413173,
title = {Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study},
author = {Pala, M. G., E-mail: pala@minatec.inpg.fr and Cresti, A., E-mail: crestial@minatec.inpg.fr and CNRS, IMEP-LAHC, F-38016 Grenoble},
abstractNote = {We present a full-quantum approach to investigate self-heating effects in nanoelectronic devices and exploit it to simulate rough nanowire field-effect transistors. Self-heating is found to significantly contribute (up to about 16%) to the degradation of the transistor performances, with an impact that is stronger for stronger roughness. The mechanism at the origin of the enhanced backscattering is the temperature increase due to the thermal conductivity reduction and the consequent increase of electron-phonon coupling.},
doi = {10.1063/1.4913511},
journal = {Journal of Applied Physics},
number = 8,
volume = 117,
place = {United States},
year = {Sat Feb 28 00:00:00 EST 2015},
month = {Sat Feb 28 00:00:00 EST 2015}
}