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Title: Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport

Abstract

The realization of room-temperature macroscopic field effect transistors (FETs) will lead to new epoch-making possibilities for electronic applications. The I{sub d}-V{sub g} characteristics of the millimeter-sized aluminum-oxide amorphous alloy (Ni{sub 0.36}Nb{sub 0.24}Zr{sub 0.40}){sub 90}H{sub 10} FETs were measured at a gate-drain bias voltage of 0–60 μV in nonmagnetic conditions and under a magnetic fields at room temperature. Application of dc voltages to the gate electrode resulted in the transistor exhibiting one-electron Coulomb oscillation with a period of 0.28 mV, Fabry-Perot interference with a period of 2.35 μV under nonmagnetic conditions, and a Fano effect with a period of 0.26 mV for Vg and 0.2 T under a magnetic field. The realization of a low-energy controllable device made from millimeter-sized Ni-Nb-Zr-H amorphous alloy throws new light on cluster electronics.

Authors:
 [1];  [2]
  1. New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579 (Japan)
  2. Research and Development Center, Waseda University, Tokyo 162-0041 (Japan)
Publication Date:
OSTI Identifier:
22413164
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; AMORPHOUS STATE; COULOMB FIELD; ELECTRIC POTENTIAL; ELECTRONS; FIELD EFFECT TRANSISTORS; INTERFERENCE; MAGNETIC FIELDS; NICKEL COMPOUNDS; NIOBIUM COMPOUNDS; OSCILLATIONS; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION; ZIRCONIUM HYDRIDES

Citation Formats

Fukuhara, M., E-mail: fukuhara@niche.tohoku.ac.jp, and Kawarada, H.. Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport. United States: N. p., 2015. Web. doi:10.1063/1.4913296.
Fukuhara, M., E-mail: fukuhara@niche.tohoku.ac.jp, & Kawarada, H.. Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport. United States. doi:10.1063/1.4913296.
Fukuhara, M., E-mail: fukuhara@niche.tohoku.ac.jp, and Kawarada, H.. Sat . "Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport". United States. doi:10.1063/1.4913296.
@article{osti_22413164,
title = {Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport},
author = {Fukuhara, M., E-mail: fukuhara@niche.tohoku.ac.jp and Kawarada, H.},
abstractNote = {The realization of room-temperature macroscopic field effect transistors (FETs) will lead to new epoch-making possibilities for electronic applications. The I{sub d}-V{sub g} characteristics of the millimeter-sized aluminum-oxide amorphous alloy (Ni{sub 0.36}Nb{sub 0.24}Zr{sub 0.40}){sub 90}H{sub 10} FETs were measured at a gate-drain bias voltage of 0–60 μV in nonmagnetic conditions and under a magnetic fields at room temperature. Application of dc voltages to the gate electrode resulted in the transistor exhibiting one-electron Coulomb oscillation with a period of 0.28 mV, Fabry-Perot interference with a period of 2.35 μV under nonmagnetic conditions, and a Fano effect with a period of 0.26 mV for Vg and 0.2 T under a magnetic field. The realization of a low-energy controllable device made from millimeter-sized Ni-Nb-Zr-H amorphous alloy throws new light on cluster electronics.},
doi = {10.1063/1.4913296},
journal = {Journal of Applied Physics},
number = 8,
volume = 117,
place = {United States},
year = {Sat Feb 28 00:00:00 EST 2015},
month = {Sat Feb 28 00:00:00 EST 2015}
}