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Title: Temperature dependence of the spin relaxation in highly degenerate ZnO thin films

Abstract

Zinc oxide is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be achieved, a thorough scientific understanding of the various spin transport and relaxation processes undergone in this material is essential. In the present paper, we are reporting our investigations into these processes via temperature dependent Hanle experiments. ZnO thin films were deposited on c-axis sapphire substrates using a pulsed laser deposition technique. Careful structural, optical, and electrical characterizations of the films were performed. Temperature dependent non-local Hanle measurements were carried out using an all-electrical scheme for spin injection and detection over the temperature range of 20–300 K. From the Hanle data, spin relaxation time in the films was determined at different temperatures. A detailed analysis of the data showed that the temperature dependence of spin relaxation time follows the linear-in-momentum Dyakonov-Perel mechanism.

Authors:
; ;  [1];  [2]; ;  [3];  [2]
  1. Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)
  2. (United States)
  3. Materials Research Science and Engineering Center, University of Utah, Salt Lake City, Utah 84112 (United States)
Publication Date:
OSTI Identifier:
22413157
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DETECTION; ENERGY BEAM DEPOSITION; LASER RADIATION; PULSED IRRADIATION; RELAXATION TIME; SAPPHIRE; SPIN; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; ZINC OXIDES

Citation Formats

Prestgard, M. C., Siegel, G., Tiwari, A., E-mail: tiwari@eng.utah.edu, Materials Research Science and Engineering Center, University of Utah, Salt Lake City, Utah 84112, Roundy, R., Raikh, M., and Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112. Temperature dependence of the spin relaxation in highly degenerate ZnO thin films. United States: N. p., 2015. Web. doi:10.1063/1.4913287.
Prestgard, M. C., Siegel, G., Tiwari, A., E-mail: tiwari@eng.utah.edu, Materials Research Science and Engineering Center, University of Utah, Salt Lake City, Utah 84112, Roundy, R., Raikh, M., & Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112. Temperature dependence of the spin relaxation in highly degenerate ZnO thin films. United States. doi:10.1063/1.4913287.
Prestgard, M. C., Siegel, G., Tiwari, A., E-mail: tiwari@eng.utah.edu, Materials Research Science and Engineering Center, University of Utah, Salt Lake City, Utah 84112, Roundy, R., Raikh, M., and Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112. Sat . "Temperature dependence of the spin relaxation in highly degenerate ZnO thin films". United States. doi:10.1063/1.4913287.
@article{osti_22413157,
title = {Temperature dependence of the spin relaxation in highly degenerate ZnO thin films},
author = {Prestgard, M. C. and Siegel, G. and Tiwari, A., E-mail: tiwari@eng.utah.edu and Materials Research Science and Engineering Center, University of Utah, Salt Lake City, Utah 84112 and Roundy, R. and Raikh, M. and Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112},
abstractNote = {Zinc oxide is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be achieved, a thorough scientific understanding of the various spin transport and relaxation processes undergone in this material is essential. In the present paper, we are reporting our investigations into these processes via temperature dependent Hanle experiments. ZnO thin films were deposited on c-axis sapphire substrates using a pulsed laser deposition technique. Careful structural, optical, and electrical characterizations of the films were performed. Temperature dependent non-local Hanle measurements were carried out using an all-electrical scheme for spin injection and detection over the temperature range of 20–300 K. From the Hanle data, spin relaxation time in the films was determined at different temperatures. A detailed analysis of the data showed that the temperature dependence of spin relaxation time follows the linear-in-momentum Dyakonov-Perel mechanism.},
doi = {10.1063/1.4913287},
journal = {Journal of Applied Physics},
number = 8,
volume = 117,
place = {United States},
year = {Sat Feb 28 00:00:00 EST 2015},
month = {Sat Feb 28 00:00:00 EST 2015}
}