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Title: Topological insulator thin films starting from the amorphous phase-Bi{sub 2}Se{sub 3} as example

Abstract

We present a new method to obtain topological insulator Bi{sub 2}Se{sub 3} thin films with a centimeter large lateral length. To produce amorphous Bi{sub 2}Se{sub 3} thin films, we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing, the samples transform into the rhombohedral Bi{sub 2}Se{sub 3} crystalline structure which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared to the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance and the Hall effect at different temperatures between 2 K and 275 K. At temperatures T ≲ 50 K and fields B ≲ 1 T, we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods.

Authors:
; ; ; ;  [1];  [2]
  1. Institute for Experimental Physics II, University of Leipzig, 04103 Leipzig (Germany)
  2. Division of Thin Films Physics, Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz (Germany)
Publication Date:
OSTI Identifier:
22413140
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANNEALING; BISMUTH SELENIDES; COMPARATIVE EVALUATIONS; EVAPORATION; HALL EFFECT; MAGNETORESISTANCE; RAMAN SPECTROSCOPY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TOPOLOGY; TRANSMISSION ELECTRON MICROSCOPY; TRIGONAL LATTICES; X-RAY DIFFRACTION

Citation Formats

Barzola-Quiquia, J., E-mail: j.barzola@physik.uni-leipzig.de, Lehmann, T., Stiller, M., Spemann, D., Esquinazi, P., and Häussler, P.. Topological insulator thin films starting from the amorphous phase-Bi{sub 2}Se{sub 3} as example. United States: N. p., 2015. Web. doi:10.1063/1.4908007.
Barzola-Quiquia, J., E-mail: j.barzola@physik.uni-leipzig.de, Lehmann, T., Stiller, M., Spemann, D., Esquinazi, P., & Häussler, P.. Topological insulator thin films starting from the amorphous phase-Bi{sub 2}Se{sub 3} as example. United States. doi:10.1063/1.4908007.
Barzola-Quiquia, J., E-mail: j.barzola@physik.uni-leipzig.de, Lehmann, T., Stiller, M., Spemann, D., Esquinazi, P., and Häussler, P.. Sat . "Topological insulator thin films starting from the amorphous phase-Bi{sub 2}Se{sub 3} as example". United States. doi:10.1063/1.4908007.
@article{osti_22413140,
title = {Topological insulator thin films starting from the amorphous phase-Bi{sub 2}Se{sub 3} as example},
author = {Barzola-Quiquia, J., E-mail: j.barzola@physik.uni-leipzig.de and Lehmann, T. and Stiller, M. and Spemann, D. and Esquinazi, P. and Häussler, P.},
abstractNote = {We present a new method to obtain topological insulator Bi{sub 2}Se{sub 3} thin films with a centimeter large lateral length. To produce amorphous Bi{sub 2}Se{sub 3} thin films, we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing, the samples transform into the rhombohedral Bi{sub 2}Se{sub 3} crystalline structure which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared to the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance and the Hall effect at different temperatures between 2 K and 275 K. At temperatures T ≲ 50 K and fields B ≲ 1 T, we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods.},
doi = {10.1063/1.4908007},
journal = {Journal of Applied Physics},
number = 7,
volume = 117,
place = {United States},
year = {Sat Feb 21 00:00:00 EST 2015},
month = {Sat Feb 21 00:00:00 EST 2015}
}