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Title: Defect chemistry and chalcogen diffusion in thin-film Cu{sub 2}ZnSnSe{sub 4} materials

Abstract

Selenium diffusion in polycrystalline thin-film Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSe) on molybdenum-coated soda-lime glass substrates was investigated by in situ monitoring of the molybdenum back-contact resistance during high-temperature selenization treatments. In these measurements, selenium diffusion through the CZTSe layer results in conversion of the molybdenum layer to MoSe{sub 2}, increasing the sheet resistance of the film stack. By monitoring the rate of MoSe{sub 2} formation as a function of annealing temperature, an activation energy of 0.5 ± 0.1 eV has been measured for selenium diffusion in CZTSe. The partial pressure dependence of chalcogen diffusion suggests that chalcogen vacancies are not the defect controlling chalcogen diffusion in thin-film CZTSe.

Authors:
; ;  [1]
  1. National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
22413137
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ANNEALING; COPPER SULFIDES; DIFFUSION; ELECTRIC CONDUCTIVITY; EV RANGE; LAYERS; MOLYBDENUM; MOLYBDENUM SELENIDES; PARTIAL PRESSURE; POLYCRYSTALS; SELENIUM; SODIUM CARBONATES; SUBSTRATES; THIN FILMS; TIN SULFIDES; VACANCIES; ZINC SELENIDES

Citation Formats

Harvey, Steven P., Repins, Ingrid, and Teeter, Glenn. Defect chemistry and chalcogen diffusion in thin-film Cu{sub 2}ZnSnSe{sub 4} materials. United States: N. p., 2015. Web. doi:10.1063/1.4907951.
Harvey, Steven P., Repins, Ingrid, & Teeter, Glenn. Defect chemistry and chalcogen diffusion in thin-film Cu{sub 2}ZnSnSe{sub 4} materials. United States. doi:10.1063/1.4907951.
Harvey, Steven P., Repins, Ingrid, and Teeter, Glenn. Sat . "Defect chemistry and chalcogen diffusion in thin-film Cu{sub 2}ZnSnSe{sub 4} materials". United States. doi:10.1063/1.4907951.
@article{osti_22413137,
title = {Defect chemistry and chalcogen diffusion in thin-film Cu{sub 2}ZnSnSe{sub 4} materials},
author = {Harvey, Steven P. and Repins, Ingrid and Teeter, Glenn},
abstractNote = {Selenium diffusion in polycrystalline thin-film Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSe) on molybdenum-coated soda-lime glass substrates was investigated by in situ monitoring of the molybdenum back-contact resistance during high-temperature selenization treatments. In these measurements, selenium diffusion through the CZTSe layer results in conversion of the molybdenum layer to MoSe{sub 2}, increasing the sheet resistance of the film stack. By monitoring the rate of MoSe{sub 2} formation as a function of annealing temperature, an activation energy of 0.5 ± 0.1 eV has been measured for selenium diffusion in CZTSe. The partial pressure dependence of chalcogen diffusion suggests that chalcogen vacancies are not the defect controlling chalcogen diffusion in thin-film CZTSe.},
doi = {10.1063/1.4907951},
journal = {Journal of Applied Physics},
number = 7,
volume = 117,
place = {United States},
year = {Sat Feb 21 00:00:00 EST 2015},
month = {Sat Feb 21 00:00:00 EST 2015}
}