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Title: Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes

Abstract

Temperature dependence and time-resolved photoluminescence (TRPL) have been carried out to study carrier dynamics for 585 nm InGaN amber light-emitting diodes (LEDs). It is found that in InGaN amber LEDs, peak emission energy only shows a slight blueshift from 588 to 575 nm, as temperature increased from 10 K to 300 K. Moreover, radiative recombination lifetime has demonstrated independent of temperature based TRPL results. These two features indicate that a strong carrier localization effect plays a dominant role in carrier dynamics for InGaN amber LEDs. Also, activation energy of 40.3 meV is obtained through Arrhenius plot of PL intensity versus temperature.

Authors:
; ; ; ; ; ;  [1]
  1. Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22413124
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CHARGE CARRIERS; LIFETIME; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; RECOMBINATION; TEMPERATURE DEPENDENCE; TIME RESOLUTION

Citation Formats

Li, Panpan, Li, Hongjian, Li, Zhi, Kang, Junjie, Yi, Xiaoyan, Li, Jinmin, and Wang, Guohong. Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes. United States: N. p., 2015. Web. doi:10.1063/1.4906960.
Li, Panpan, Li, Hongjian, Li, Zhi, Kang, Junjie, Yi, Xiaoyan, Li, Jinmin, & Wang, Guohong. Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes. United States. doi:10.1063/1.4906960.
Li, Panpan, Li, Hongjian, Li, Zhi, Kang, Junjie, Yi, Xiaoyan, Li, Jinmin, and Wang, Guohong. Sat . "Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes". United States. doi:10.1063/1.4906960.
@article{osti_22413124,
title = {Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes},
author = {Li, Panpan and Li, Hongjian and Li, Zhi and Kang, Junjie and Yi, Xiaoyan and Li, Jinmin and Wang, Guohong},
abstractNote = {Temperature dependence and time-resolved photoluminescence (TRPL) have been carried out to study carrier dynamics for 585 nm InGaN amber light-emitting diodes (LEDs). It is found that in InGaN amber LEDs, peak emission energy only shows a slight blueshift from 588 to 575 nm, as temperature increased from 10 K to 300 K. Moreover, radiative recombination lifetime has demonstrated independent of temperature based TRPL results. These two features indicate that a strong carrier localization effect plays a dominant role in carrier dynamics for InGaN amber LEDs. Also, activation energy of 40.3 meV is obtained through Arrhenius plot of PL intensity versus temperature.},
doi = {10.1063/1.4906960},
journal = {Journal of Applied Physics},
number = 7,
volume = 117,
place = {United States},
year = {Sat Feb 21 00:00:00 EST 2015},
month = {Sat Feb 21 00:00:00 EST 2015}
}