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Title: High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

Abstract

We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

Authors:
; ;  [1];  [2];  [3];  [4];  [3]
  1. Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States)
  2. (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States)
  3. Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
  4. (Russian Federation)
Publication Date:
OSTI Identifier:
22413094
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AGING; COMPARATIVE EVALUATIONS; DIRECT CURRENT; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRONS; FABRICATION; GRAPHENE; JOULE HEATING; MOLYBDENUM SULFIDES; PERFORMANCE; RELAXATION; SENSORS; TEMPERATURE DEPENDENCE; THIN FILMS; TRANSISTORS

Citation Formats

Jiang, C., Samnakay, R., Balandin, A. A., E-mail: balandin@ee.ucr.edu, Phonon Optimized Engineered Materials, Rumyantsev, S. L., Ioffe Physical-Technical Institute, St. Petersburg 194021, and Shur, M. S. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics. United States: N. p., 2015. Web. doi:10.1063/1.4906496.
Jiang, C., Samnakay, R., Balandin, A. A., E-mail: balandin@ee.ucr.edu, Phonon Optimized Engineered Materials, Rumyantsev, S. L., Ioffe Physical-Technical Institute, St. Petersburg 194021, & Shur, M. S. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics. United States. doi:10.1063/1.4906496.
Jiang, C., Samnakay, R., Balandin, A. A., E-mail: balandin@ee.ucr.edu, Phonon Optimized Engineered Materials, Rumyantsev, S. L., Ioffe Physical-Technical Institute, St. Petersburg 194021, and Shur, M. S. Sat . "High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics". United States. doi:10.1063/1.4906496.
@article{osti_22413094,
title = {High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics},
author = {Jiang, C. and Samnakay, R. and Balandin, A. A., E-mail: balandin@ee.ucr.edu and Phonon Optimized Engineered Materials and Rumyantsev, S. L. and Ioffe Physical-Technical Institute, St. Petersburg 194021 and Shur, M. S.},
abstractNote = {We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.},
doi = {10.1063/1.4906496},
journal = {Journal of Applied Physics},
number = 6,
volume = 117,
place = {United States},
year = {Sat Feb 14 00:00:00 EST 2015},
month = {Sat Feb 14 00:00:00 EST 2015}
}