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Title: Erratum: “High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115, 174507 (2014)]

Abstract

No abstract prepared.

Authors:
; ; ; ; ; ;  [1]
  1. Advanced Technology Development Center, IIT Kharagpur, Kharagpur 721302 (India)
Publication Date:
OSTI Identifier:
22413029
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; COMPUTERIZED SIMULATION; CONCENTRATION RATIO; GALLIUM NITRIDES; HETEROJUNCTIONS; LAYERS; RESOLUTION; SAPPHIRE; X-RAY DIFFRACTION

Citation Formats

Jana, Sanjay Kumar, E-mail: skjiit@gmail.com, Mukhopadhyay, Partha, Ghosh, Saptarsi, Kabi, Sanjib, Bag, Ankush, Kumar, Rahul, and Biswas, D.. Erratum: “High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115, 174507 (2014)]. United States: N. p., 2015. Web. doi:10.1063/1.4907314.
Jana, Sanjay Kumar, E-mail: skjiit@gmail.com, Mukhopadhyay, Partha, Ghosh, Saptarsi, Kabi, Sanjib, Bag, Ankush, Kumar, Rahul, & Biswas, D.. Erratum: “High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115, 174507 (2014)]. United States. doi:10.1063/1.4907314.
Jana, Sanjay Kumar, E-mail: skjiit@gmail.com, Mukhopadhyay, Partha, Ghosh, Saptarsi, Kabi, Sanjib, Bag, Ankush, Kumar, Rahul, and Biswas, D.. Wed . "Erratum: “High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115, 174507 (2014)]". United States. doi:10.1063/1.4907314.
@article{osti_22413029,
title = {Erratum: “High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115, 174507 (2014)]},
author = {Jana, Sanjay Kumar, E-mail: skjiit@gmail.com and Mukhopadhyay, Partha and Ghosh, Saptarsi and Kabi, Sanjib and Bag, Ankush and Kumar, Rahul and Biswas, D.},
abstractNote = {No abstract prepared.},
doi = {10.1063/1.4907314},
journal = {Journal of Applied Physics},
number = 4,
volume = 117,
place = {United States},
year = {Wed Jan 28 00:00:00 EST 2015},
month = {Wed Jan 28 00:00:00 EST 2015}
}