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Title: Sensitivity of CoSi{sub 2} precipitation in silicon to extra-low dopant concentrations. I. Experiment

Abstract

We demonstrate that the precipitation of cobalt disilicide phase in silicon during high-temperature (500 °C and 650 °C) implantation is noticeably affected by impurities of phosphorus and boron. Measurements of B-type CoSi{sub 2} cluster sizes and number densities as a function of implantation dose indicate that the number density of clusters progressively increases as the phosphorus concentration increases from 7 × 10{sup 11} to 8 × 10{sup 13 }cm{sup −3}. A tentative explanation of these observations is proposed based on the previously suggested mechanism of precipitate nucleation, and on the results of first principles calculations summarized in Paper II, published as a follow-up paper. The results imply that utmost care is to be taken when dealing with transition metal precipitation during ion implantation into silicon because variations in the dopant content can affect the reproducibility of results even at extremely low dopant concentrations.

Authors:
; ;  [1];  [2];  [3];  [4]
  1. Centre de Sciences Nucléaires et de Sciences de la Matière, bâtiment 108, 91405 Orsay Campus (France)
  2. NRC “Kurchatov Institute,” Kurchatov Sq., 1, 123182 Moscow (Russian Federation)
  3. (Russian Federation)
  4. Department of Physical Problems of Materials Science, National Research Nuclear University MEPhI, 115409 Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
22413020
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON; COBALT; COBALT SILICIDES; CONCENTRATION RATIO; ION IMPLANTATION; NUCLEATION; PHOSPHORUS; PRECIPITATION; SILICON; TEMPERATURE DEPENDENCE; VARIATIONS

Citation Formats

Fortuna, F., Ruault, M.-O., Kaïtasov, O., Borodin, V. A., Department of Physical Problems of Materials Science, National Research Nuclear University MEPhI, 115409 Moscow, and Ganchenkova, M. G.. Sensitivity of CoSi{sub 2} precipitation in silicon to extra-low dopant concentrations. I. Experiment. United States: N. p., 2015. Web. doi:10.1063/1.4906402.
Fortuna, F., Ruault, M.-O., Kaïtasov, O., Borodin, V. A., Department of Physical Problems of Materials Science, National Research Nuclear University MEPhI, 115409 Moscow, & Ganchenkova, M. G.. Sensitivity of CoSi{sub 2} precipitation in silicon to extra-low dopant concentrations. I. Experiment. United States. doi:10.1063/1.4906402.
Fortuna, F., Ruault, M.-O., Kaïtasov, O., Borodin, V. A., Department of Physical Problems of Materials Science, National Research Nuclear University MEPhI, 115409 Moscow, and Ganchenkova, M. G.. Wed . "Sensitivity of CoSi{sub 2} precipitation in silicon to extra-low dopant concentrations. I. Experiment". United States. doi:10.1063/1.4906402.
@article{osti_22413020,
title = {Sensitivity of CoSi{sub 2} precipitation in silicon to extra-low dopant concentrations. I. Experiment},
author = {Fortuna, F. and Ruault, M.-O. and Kaïtasov, O. and Borodin, V. A. and Department of Physical Problems of Materials Science, National Research Nuclear University MEPhI, 115409 Moscow and Ganchenkova, M. G.},
abstractNote = {We demonstrate that the precipitation of cobalt disilicide phase in silicon during high-temperature (500 °C and 650 °C) implantation is noticeably affected by impurities of phosphorus and boron. Measurements of B-type CoSi{sub 2} cluster sizes and number densities as a function of implantation dose indicate that the number density of clusters progressively increases as the phosphorus concentration increases from 7 × 10{sup 11} to 8 × 10{sup 13 }cm{sup −3}. A tentative explanation of these observations is proposed based on the previously suggested mechanism of precipitate nucleation, and on the results of first principles calculations summarized in Paper II, published as a follow-up paper. The results imply that utmost care is to be taken when dealing with transition metal precipitation during ion implantation into silicon because variations in the dopant content can affect the reproducibility of results even at extremely low dopant concentrations.},
doi = {10.1063/1.4906402},
journal = {Journal of Applied Physics},
number = 4,
volume = 117,
place = {United States},
year = {Wed Jan 28 00:00:00 EST 2015},
month = {Wed Jan 28 00:00:00 EST 2015}
}