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Title: Enhancement of critical current density in YBa{sub 2}Cu{sub 3}O{sub 7} films using a semiconductor ion implanter

Abstract

An up-to-11-fold enhancement was observed in the in-magnetic-field critical current density (J{sub c}) in epitaxial YBa{sub 2}Cu{sub 3}O{sub 7} films on CeO{sub 2}-buffered SrTiO{sub 3} substrates by irradiation with 200- to 750-keV Si and 200-keV B ions. This enhancement indicates that ion beams in the range of 100 to 1000 keV, which are widely used for modifying the conductive properties of semiconducting materials, can significantly improve the vortex-pinning properties in second-generation superconducting wires. Also observed was a scaling relation between J{sub c} and the density of the vacancies (i.e., of Frenkel pairs) produced by the nuclear collisions between incident ions and target atoms, suggesting that this density is a key parameter in determining the magnitude of the J{sub c} enhancement. Also observed was an additional J{sub c} enhancement by a modification of the depth distribution of the vacancies, thus demonstrating the flexibility in controlling artificial pinning center (APC) properties in physical APC introduction.

Authors:
; ; ; ; ; ; ;  [1]
  1. National Institute of Advanced Industrial Science and Technology, 3058565 Tsukuba (Japan)
Publication Date:
OSTI Identifier:
22412994
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BARIUM COMPOUNDS; BORON IONS; CERIUM OXIDES; CRITICAL CURRENT; CUPRATES; CURRENT DENSITY; EPITAXY; FILMS; ION IMPLANTATION; IRRADIATION; MAGNETIC FIELDS; SEMICONDUCTOR MATERIALS; SPATIAL DISTRIBUTION; STRONTIUM TITANATES; SUBSTRATES; SUPERCONDUCTING WIRES; VACANCIES; VORTICES; YTTRIUM COMPOUNDS

Citation Formats

Matsui, H., E-mail: h.matsui@aist.go.jp, Ootsuka, T., Ogiso, H., Yamasaki, H., Sohma, M., Yamaguchi, I., Kumagai, T., and Manabe, T.. Enhancement of critical current density in YBa{sub 2}Cu{sub 3}O{sub 7} films using a semiconductor ion implanter. United States: N. p., 2015. Web. doi:10.1063/1.4906782.
Matsui, H., E-mail: h.matsui@aist.go.jp, Ootsuka, T., Ogiso, H., Yamasaki, H., Sohma, M., Yamaguchi, I., Kumagai, T., & Manabe, T.. Enhancement of critical current density in YBa{sub 2}Cu{sub 3}O{sub 7} films using a semiconductor ion implanter. United States. doi:10.1063/1.4906782.
Matsui, H., E-mail: h.matsui@aist.go.jp, Ootsuka, T., Ogiso, H., Yamasaki, H., Sohma, M., Yamaguchi, I., Kumagai, T., and Manabe, T.. Wed . "Enhancement of critical current density in YBa{sub 2}Cu{sub 3}O{sub 7} films using a semiconductor ion implanter". United States. doi:10.1063/1.4906782.
@article{osti_22412994,
title = {Enhancement of critical current density in YBa{sub 2}Cu{sub 3}O{sub 7} films using a semiconductor ion implanter},
author = {Matsui, H., E-mail: h.matsui@aist.go.jp and Ootsuka, T. and Ogiso, H. and Yamasaki, H. and Sohma, M. and Yamaguchi, I. and Kumagai, T. and Manabe, T.},
abstractNote = {An up-to-11-fold enhancement was observed in the in-magnetic-field critical current density (J{sub c}) in epitaxial YBa{sub 2}Cu{sub 3}O{sub 7} films on CeO{sub 2}-buffered SrTiO{sub 3} substrates by irradiation with 200- to 750-keV Si and 200-keV B ions. This enhancement indicates that ion beams in the range of 100 to 1000 keV, which are widely used for modifying the conductive properties of semiconducting materials, can significantly improve the vortex-pinning properties in second-generation superconducting wires. Also observed was a scaling relation between J{sub c} and the density of the vacancies (i.e., of Frenkel pairs) produced by the nuclear collisions between incident ions and target atoms, suggesting that this density is a key parameter in determining the magnitude of the J{sub c} enhancement. Also observed was an additional J{sub c} enhancement by a modification of the depth distribution of the vacancies, thus demonstrating the flexibility in controlling artificial pinning center (APC) properties in physical APC introduction.},
doi = {10.1063/1.4906782},
journal = {Journal of Applied Physics},
number = 4,
volume = 117,
place = {United States},
year = {Wed Jan 28 00:00:00 EST 2015},
month = {Wed Jan 28 00:00:00 EST 2015}
}