Band offset studies in pulse laser deposited Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions
Abstract
The valence and conduction band offsets of Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions deposited by pulsed laser deposition technique were estimated by X-ray photoelectron, valence band, and UV-visible spectroscopy. Type-II band alignment (staggered gap) with ratios of conduction band to valence band offsets (ΔE{sub C}/ΔE{sub V}) was found to be 0.77 and 0.59 for Zn{sub 0.95}Cd{sub 0.05}O/ZnO and Zn{sub 0.90}Cd{sub 0.10}O/ZnO hetero-structures, respectively, which can be used in longer wavelength regime optoelectronic devices. The higher value of valence band offset as compared to conduction band offset suggests that the transport at interface is mainly due to electrons.
- Authors:
-
- UGC-DAE Consortium for Scientific Research, Indore 452001 (India)
- Publication Date:
- OSTI Identifier:
- 22412936
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; COMPARATIVE EVALUATIONS; ELECTRIC CONTACTS; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY BEAM DEPOSITION; ENERGY GAP; HETEROJUNCTIONS; INTERFACES; LASER RADIATION; OPTOELECTRONIC DEVICES; PULSED IRRADIATION; VALENCE; ZINC OXIDES
Citation Formats
Devi, Vanita, Kumar, Ravindra, Joshi, B. C., E-mail: bhubesh.joshi@jiit.ac.in, Kumar, Manish, Choudhary, R. J., and Phase, D. M. Band offset studies in pulse laser deposited Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions. United States: N. p., 2015.
Web. doi:10.1063/1.4922425.
Devi, Vanita, Kumar, Ravindra, Joshi, B. C., E-mail: bhubesh.joshi@jiit.ac.in, Kumar, Manish, Choudhary, R. J., & Phase, D. M. Band offset studies in pulse laser deposited Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions. United States. https://doi.org/10.1063/1.4922425
Devi, Vanita, Kumar, Ravindra, Joshi, B. C., E-mail: bhubesh.joshi@jiit.ac.in, Kumar, Manish, Choudhary, R. J., and Phase, D. M. 2015.
"Band offset studies in pulse laser deposited Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions". United States. https://doi.org/10.1063/1.4922425.
@article{osti_22412936,
title = {Band offset studies in pulse laser deposited Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions},
author = {Devi, Vanita and Kumar, Ravindra and Joshi, B. C., E-mail: bhubesh.joshi@jiit.ac.in and Kumar, Manish and Choudhary, R. J. and Phase, D. M.},
abstractNote = {The valence and conduction band offsets of Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions deposited by pulsed laser deposition technique were estimated by X-ray photoelectron, valence band, and UV-visible spectroscopy. Type-II band alignment (staggered gap) with ratios of conduction band to valence band offsets (ΔE{sub C}/ΔE{sub V}) was found to be 0.77 and 0.59 for Zn{sub 0.95}Cd{sub 0.05}O/ZnO and Zn{sub 0.90}Cd{sub 0.10}O/ZnO hetero-structures, respectively, which can be used in longer wavelength regime optoelectronic devices. The higher value of valence band offset as compared to conduction band offset suggests that the transport at interface is mainly due to electrons.},
doi = {10.1063/1.4922425},
url = {https://www.osti.gov/biblio/22412936},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 22,
volume = 117,
place = {United States},
year = {Sun Jun 14 00:00:00 EDT 2015},
month = {Sun Jun 14 00:00:00 EDT 2015}
}
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