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Title: Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

Abstract

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiO{sub x}/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (V{sub bi} = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

Authors:
; ; ;  [1];  [2];  [1];  [3]
  1. SHU-SolarE R and D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China)
  2. Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444 (China)
  3. (China)
Publication Date:
OSTI Identifier:
22412780
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; DOPED MATERIALS; ENERGY CONVERSION; HETEROJUNCTIONS; HOLES; INDIUM COMPOUNDS; INDIUM FLUORIDES; INDIUM OXIDES; LAYERS; N-TYPE CONDUCTORS; POTENTIALS; SILICON; SILICON OXIDES; SOLAR CELLS; SPUTTERING; TIN; TUNNEL EFFECT; WORK FUNCTIONS

Citation Formats

Du, H. W., Yang, J., Li, Y. H., Xu, F., Xu, J., Ma, Z. Q., E-mail: zqma@shu.edu.cn, and Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444. Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering. United States: N. p., 2015. Web. doi:10.1063/1.4914325.
Du, H. W., Yang, J., Li, Y. H., Xu, F., Xu, J., Ma, Z. Q., E-mail: zqma@shu.edu.cn, & Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444. Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering. United States. doi:10.1063/1.4914325.
Du, H. W., Yang, J., Li, Y. H., Xu, F., Xu, J., Ma, Z. Q., E-mail: zqma@shu.edu.cn, and Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444. Mon . "Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering". United States. doi:10.1063/1.4914325.
@article{osti_22412780,
title = {Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering},
author = {Du, H. W. and Yang, J. and Li, Y. H. and Xu, F. and Xu, J. and Ma, Z. Q., E-mail: zqma@shu.edu.cn and Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444},
abstractNote = {Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiO{sub x}/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (V{sub bi} = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.},
doi = {10.1063/1.4914325},
journal = {Applied Physics Letters},
number = 9,
volume = 106,
place = {United States},
year = {Mon Mar 02 00:00:00 EST 2015},
month = {Mon Mar 02 00:00:00 EST 2015}
}