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Title: Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

Abstract

Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

Authors:
 [1];  [2]; ;  [1]
  1. Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven (Netherlands)
  2. (Netherlands)
Publication Date:
OSTI Identifier:
22412776
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITORS; CARRIER MOBILITY; FERROELECTRIC MATERIALS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; POLARIZATION; SEMICONDUCTOR MATERIALS; THIN FILMS; TRANSISTORS; VOLATILITY; ZINC OXIDES

Citation Formats

Gelinck, G. H., E-mail: Gerwin.Gelinck@tno.nl, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Breemen, A. J. J. M. van, and Cobb, B.. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor. United States: N. p., 2015. Web. doi:10.1063/1.4913920.
Gelinck, G. H., E-mail: Gerwin.Gelinck@tno.nl, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Breemen, A. J. J. M. van, & Cobb, B.. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor. United States. doi:10.1063/1.4913920.
Gelinck, G. H., E-mail: Gerwin.Gelinck@tno.nl, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Breemen, A. J. J. M. van, and Cobb, B.. Mon . "Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor". United States. doi:10.1063/1.4913920.
@article{osti_22412776,
title = {Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor},
author = {Gelinck, G. H., E-mail: Gerwin.Gelinck@tno.nl and Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven and Breemen, A. J. J. M. van and Cobb, B.},
abstractNote = {Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.},
doi = {10.1063/1.4913920},
journal = {Applied Physics Letters},
number = 9,
volume = 106,
place = {United States},
year = {Mon Mar 02 00:00:00 EST 2015},
month = {Mon Mar 02 00:00:00 EST 2015}
}