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Title: Semi-insulating Sn-Zr-O: Tunable resistance buffer layers

Abstract

Highly resistive and transparent (HRT) buffer layers are critical components of solar cells and other opto-electronic devices. HRT layers are often undoped transparent conducting oxides. However, these oxides can be too conductive to form an optimal HRT. Here, we present a method to produce HRT layers with tunable electrical resistivity, despite the presence of high concentrations of unintentionally or intentionally added dopants in the film. This method relies on alloying wide-bandgap, high-k dielectric materials (e.g., ZrO{sub 2}) into the host oxide to tune the resistivity. We demonstrate Sn{sub x}Zr{sub 1−x}O{sub 2}:F films with tunable resistivities varying from 0.001 to 10 Ω cm, which are controlled by the Zr mole fraction in the films. Increasing Zr suppresses carriers by expanding the bandgap almost entirely by shifting the valence-band position, which allows the HRT layers to maintain good conduction-band alignment for a low-resistance front contact.

Authors:
; ; ;  [1]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
22412754
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; CONCENTRATION RATIO; DIELECTRIC MATERIALS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC EQUIPMENT; ENERGY GAP; FILMS; LAYERS; SOLAR CELLS; TIN COMPOUNDS; VALENCE; ZIRCONATES; ZIRCONIUM OXIDES

Citation Formats

Barnes, Teresa M., Burst, James M., Reese, Matthew O., and Perkins, Craig L. Semi-insulating Sn-Zr-O: Tunable resistance buffer layers. United States: N. p., 2015. Web. doi:10.1063/1.4914173.
Barnes, Teresa M., Burst, James M., Reese, Matthew O., & Perkins, Craig L. Semi-insulating Sn-Zr-O: Tunable resistance buffer layers. United States. doi:10.1063/1.4914173.
Barnes, Teresa M., Burst, James M., Reese, Matthew O., and Perkins, Craig L. Mon . "Semi-insulating Sn-Zr-O: Tunable resistance buffer layers". United States. doi:10.1063/1.4914173.
@article{osti_22412754,
title = {Semi-insulating Sn-Zr-O: Tunable resistance buffer layers},
author = {Barnes, Teresa M. and Burst, James M. and Reese, Matthew O. and Perkins, Craig L.},
abstractNote = {Highly resistive and transparent (HRT) buffer layers are critical components of solar cells and other opto-electronic devices. HRT layers are often undoped transparent conducting oxides. However, these oxides can be too conductive to form an optimal HRT. Here, we present a method to produce HRT layers with tunable electrical resistivity, despite the presence of high concentrations of unintentionally or intentionally added dopants in the film. This method relies on alloying wide-bandgap, high-k dielectric materials (e.g., ZrO{sub 2}) into the host oxide to tune the resistivity. We demonstrate Sn{sub x}Zr{sub 1−x}O{sub 2}:F films with tunable resistivities varying from 0.001 to 10 Ω cm, which are controlled by the Zr mole fraction in the films. Increasing Zr suppresses carriers by expanding the bandgap almost entirely by shifting the valence-band position, which allows the HRT layers to maintain good conduction-band alignment for a low-resistance front contact.},
doi = {10.1063/1.4914173},
journal = {Applied Physics Letters},
number = 9,
volume = 106,
place = {United States},
year = {Mon Mar 02 00:00:00 EST 2015},
month = {Mon Mar 02 00:00:00 EST 2015}
}