skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Theoretical study of phosphorene tunneling field effect transistors

Abstract

In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications. Our simulation shows that phosphorene TFETs exhibit subthreshold slope below 60 mV/dec and a wide range of on-current depending on the transport direction due to highly anisotropic band structures of phosphorene. By benchmarking with monolayer MoTe{sub 2} TFETs, we predict that phosphorene TFETs oriented in the small effective mass direction can yield much larger on-current at the same on-current/off-current ratio than monolayer MoTe{sub 2} TFETs. It is also observed that a gate underlap structure is required for scaling down phosphorene TFETs in the small effective mass direction to suppress the source-to-drain direct tunneling leakage current.

Authors:
;  [1]
  1. SEMATECH, 257 Fuller Rd #2200, Albany, New York 12203 (United States)
Publication Date:
OSTI Identifier:
22412728
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; BENCHMARKS; EFFECTIVE MASS; ELECTRIC CURRENTS; ENERGY GAP; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENT; MOLYBDENUM TELLURIDES; PERFORMANCE; PHOSPHORUS; TUNNEL EFFECT; TWO-DIMENSIONAL SYSTEMS

Citation Formats

Chang, Jiwon, and Hobbs, Chris. Theoretical study of phosphorene tunneling field effect transistors. United States: N. p., 2015. Web. doi:10.1063/1.4913842.
Chang, Jiwon, & Hobbs, Chris. Theoretical study of phosphorene tunneling field effect transistors. United States. doi:10.1063/1.4913842.
Chang, Jiwon, and Hobbs, Chris. Mon . "Theoretical study of phosphorene tunneling field effect transistors". United States. doi:10.1063/1.4913842.
@article{osti_22412728,
title = {Theoretical study of phosphorene tunneling field effect transistors},
author = {Chang, Jiwon and Hobbs, Chris},
abstractNote = {In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications. Our simulation shows that phosphorene TFETs exhibit subthreshold slope below 60 mV/dec and a wide range of on-current depending on the transport direction due to highly anisotropic band structures of phosphorene. By benchmarking with monolayer MoTe{sub 2} TFETs, we predict that phosphorene TFETs oriented in the small effective mass direction can yield much larger on-current at the same on-current/off-current ratio than monolayer MoTe{sub 2} TFETs. It is also observed that a gate underlap structure is required for scaling down phosphorene TFETs in the small effective mass direction to suppress the source-to-drain direct tunneling leakage current.},
doi = {10.1063/1.4913842},
journal = {Applied Physics Letters},
number = 8,
volume = 106,
place = {United States},
year = {Mon Feb 23 00:00:00 EST 2015},
month = {Mon Feb 23 00:00:00 EST 2015}
}