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Title: Low-frequency noise in MoSe{sub 2} field effect transistors

Abstract

One of the important performance metrics of emerging nanoelectronic devices, including low dimensional Field Effect Transistors (FETs), is the magnitude of the low-frequency noise. Atomically thin 2D semiconductor channel materials such as MoX{sub 2} (X ≡ S, Se) have shown promising transistor characteristics such as I{sub ON}/I{sub OFF} ratio exceeding 10{sup 6} and low I{sub OFF}, making them attractive as channel materials for next generation nanoelectronic devices. However, MoS{sub 2} FETs demonstrated to date exhibit high noise levels under ambient conditions. In this letter, we report at least two orders of magnitude smaller values of Hooge parameter in a back-gated MoSe{sub 2} FET (10 atomic layers) with nickel S/D contacts and measured at atmospheric pressure and temperature. The channel dominated regime of noise was extracted from the total noise spectrum and is shown to follow a mobility fluctuation model with 1/f dependence. The low noise in MoSe{sub 2} FETs is comparable to other 1D nanoelectronic devices such as carbon nanotube FETs (CNT-FETs) and paves the way for use in future applications in precision sensing and communications.

Authors:
; ; ;  [1];  [2];  [3];  [4];  [2]
  1. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
  2. (United States)
  3. Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  4. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)
Publication Date:
OSTI Identifier:
22412726
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATMOSPHERIC PRESSURE; CARBON NANOTUBES; CARRIER MOBILITY; COMPARATIVE EVALUATIONS; FIELD EFFECT TRANSISTORS; FLUCTUATIONS; LAYERS; MOBILITY; MOLYBDENUM SELENIDES; MOLYBDENUM SULFIDES; NICKEL; SEMICONDUCTOR MATERIALS

Citation Formats

Das, Suprem R., E-mail: srdaspurdue@gmail.com, E-mail: janes@purdue.edu, Kwon, Jiseok, Prakash, Abhijith, Janes, David B., E-mail: srdaspurdue@gmail.com, E-mail: janes@purdue.edu, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, Delker, Collin J., Das, Saptarshi, and Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439. Low-frequency noise in MoSe{sub 2} field effect transistors. United States: N. p., 2015. Web. doi:10.1063/1.4913714.
Das, Suprem R., E-mail: srdaspurdue@gmail.com, E-mail: janes@purdue.edu, Kwon, Jiseok, Prakash, Abhijith, Janes, David B., E-mail: srdaspurdue@gmail.com, E-mail: janes@purdue.edu, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, Delker, Collin J., Das, Saptarshi, & Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439. Low-frequency noise in MoSe{sub 2} field effect transistors. United States. doi:10.1063/1.4913714.
Das, Suprem R., E-mail: srdaspurdue@gmail.com, E-mail: janes@purdue.edu, Kwon, Jiseok, Prakash, Abhijith, Janes, David B., E-mail: srdaspurdue@gmail.com, E-mail: janes@purdue.edu, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, Delker, Collin J., Das, Saptarshi, and Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439. Mon . "Low-frequency noise in MoSe{sub 2} field effect transistors". United States. doi:10.1063/1.4913714.
@article{osti_22412726,
title = {Low-frequency noise in MoSe{sub 2} field effect transistors},
author = {Das, Suprem R., E-mail: srdaspurdue@gmail.com, E-mail: janes@purdue.edu and Kwon, Jiseok and Prakash, Abhijith and Janes, David B., E-mail: srdaspurdue@gmail.com, E-mail: janes@purdue.edu and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 and Delker, Collin J. and Das, Saptarshi and Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439},
abstractNote = {One of the important performance metrics of emerging nanoelectronic devices, including low dimensional Field Effect Transistors (FETs), is the magnitude of the low-frequency noise. Atomically thin 2D semiconductor channel materials such as MoX{sub 2} (X ≡ S, Se) have shown promising transistor characteristics such as I{sub ON}/I{sub OFF} ratio exceeding 10{sup 6} and low I{sub OFF}, making them attractive as channel materials for next generation nanoelectronic devices. However, MoS{sub 2} FETs demonstrated to date exhibit high noise levels under ambient conditions. In this letter, we report at least two orders of magnitude smaller values of Hooge parameter in a back-gated MoSe{sub 2} FET (10 atomic layers) with nickel S/D contacts and measured at atmospheric pressure and temperature. The channel dominated regime of noise was extracted from the total noise spectrum and is shown to follow a mobility fluctuation model with 1/f dependence. The low noise in MoSe{sub 2} FETs is comparable to other 1D nanoelectronic devices such as carbon nanotube FETs (CNT-FETs) and paves the way for use in future applications in precision sensing and communications.},
doi = {10.1063/1.4913714},
journal = {Applied Physics Letters},
number = 8,
volume = 106,
place = {United States},
year = {Mon Feb 23 00:00:00 EST 2015},
month = {Mon Feb 23 00:00:00 EST 2015}
}