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Title: Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Abstract

This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5 V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ϕ{sub B} increase) together with R{sub ON} degradation; (ii) the electron trappingmore » in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.« less

Authors:
;  [1];  [2]; ; ; ;  [3];  [3];  [4]
  1. Department of Electrical Engineering (ESAT), KU Leuven, 3001 Leuven (Belgium)
  2. (Belgium)
  3. imec, Kapeldreef 75, 3001 Leuven (Belgium)
  4. (CMST), imec and Ghent University, Technologiepark 914a, 9052 Gent (Belgium)
Publication Date:
OSTI Identifier:
22412721
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CATHODES; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRONS; ENERGY LEVELS; GALLIUM NITRIDES; LAYERS; LEAKAGE CURRENT; SCHOTTKY BARRIER DIODES; SENSORS; STRESSES; SURFACES; TRANSIENTS; TRAPPING; TWO-DIMENSIONAL SYSTEMS

Citation Formats

Hu, J., E-mail: Jie.Hu@imec.be, Groeseneken, G., imec, Kapeldreef 75, 3001 Leuven, Stoffels, S., Lenci, S., Venegas, R., Decoutere, S., Bakeroot, B., and Centre for Microsystems Technology. Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode. United States: N. p., 2015. Web. doi:10.1063/1.4913575.
Hu, J., E-mail: Jie.Hu@imec.be, Groeseneken, G., imec, Kapeldreef 75, 3001 Leuven, Stoffels, S., Lenci, S., Venegas, R., Decoutere, S., Bakeroot, B., & Centre for Microsystems Technology. Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode. United States. doi:10.1063/1.4913575.
Hu, J., E-mail: Jie.Hu@imec.be, Groeseneken, G., imec, Kapeldreef 75, 3001 Leuven, Stoffels, S., Lenci, S., Venegas, R., Decoutere, S., Bakeroot, B., and Centre for Microsystems Technology. Mon . "Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode". United States. doi:10.1063/1.4913575.
@article{osti_22412721,
title = {Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode},
author = {Hu, J., E-mail: Jie.Hu@imec.be and Groeseneken, G. and imec, Kapeldreef 75, 3001 Leuven and Stoffels, S. and Lenci, S. and Venegas, R. and Decoutere, S. and Bakeroot, B. and Centre for Microsystems Technology},
abstractNote = {This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5 V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ϕ{sub B} increase) together with R{sub ON} degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.},
doi = {10.1063/1.4913575},
journal = {Applied Physics Letters},
number = 8,
volume = 106,
place = {United States},
year = {Mon Feb 23 00:00:00 EST 2015},
month = {Mon Feb 23 00:00:00 EST 2015}
}