Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study

Journal Article · Mon Feb 23 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913908· OSTI ID:22412707

Galbiati, Marta; Tatay, Sergio; Delprat, Sophie; Khanh, Hung Le; Deranlot, Cyrile; Collin, Sophie; Seneor, Pierre; Mattana, Richard; Petroff, Frédéric ^[1]; Servet, Bernard ^[2]

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1. Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France)
2. Thales Research and Technology, 1 Av. A. Fresnel, 91767 Palaiseau (France)

Molecular and organic spintronics is an emerging research field which combines the versatility of chemistry with the non-volatility of spintronics. Organic materials have already proved their potential as tunnel barriers (TBs) or spacers in spintronics devices showing sizable spin valve like magnetoresistance effects. In the last years, a large effort has been focused on the optimization of these organic spintronics devices. Insertion of a thin inorganic tunnel barrier (Al{sub 2}O{sub 3} or MgO) at the bottom ferromagnetic metal (FM)/organic interface seems to improve the spin transport efficiency. However, during the top FM electrode deposition, metal atoms are prone to diffuse through the organic layer and potentially short-circuit it. This may lead to the formation of a working but undesired FM/TB/FM magnetic tunnel junction where the organic plays no role. Indeed, establishing a protocol to demonstrate the effective spin dependent transport through the organic layer remains a key issue. Here, we focus on Co/Al{sub 2}O{sub 3}/Alq{sub 3}/Co junctions and show that combining magnetoresistance and inelastic electron tunnelling spectroscopy measurements one can sort out working “organic” and short-circuited junctions fabricated on the same wafer.

• OSTI ID: 22412707
• Journal Information: Applied Physics Letters, Vol. 106, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
DEPOSITION
DIFFUSION BARRIERS
ELECTRIC CONTACTS
ELECTRONS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
INTERFACES
LAYERS
MAGNESIUM OXIDES
MAGNETORESISTANCE
ORGANIC MATTER
SEMICONDUCTOR JUNCTIONS
SPIN
TUNNEL EFFECT
VALVES