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Title: Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study

Abstract

Molecular and organic spintronics is an emerging research field which combines the versatility of chemistry with the non-volatility of spintronics. Organic materials have already proved their potential as tunnel barriers (TBs) or spacers in spintronics devices showing sizable spin valve like magnetoresistance effects. In the last years, a large effort has been focused on the optimization of these organic spintronics devices. Insertion of a thin inorganic tunnel barrier (Al{sub 2}O{sub 3} or MgO) at the bottom ferromagnetic metal (FM)/organic interface seems to improve the spin transport efficiency. However, during the top FM electrode deposition, metal atoms are prone to diffuse through the organic layer and potentially short-circuit it. This may lead to the formation of a working but undesired FM/TB/FM magnetic tunnel junction where the organic plays no role. Indeed, establishing a protocol to demonstrate the effective spin dependent transport through the organic layer remains a key issue. Here, we focus on Co/Al{sub 2}O{sub 3}/Alq{sub 3}/Co junctions and show that combining magnetoresistance and inelastic electron tunnelling spectroscopy measurements one can sort out working “organic” and short-circuited junctions fabricated on the same wafer.

Authors:
; ; ; ; ; ; ; ;  [1];  [2]
  1. Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France)
  2. Thales Research and Technology, 1 Av. A. Fresnel, 91767 Palaiseau (France)
Publication Date:
OSTI Identifier:
22412707
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; DEPOSITION; DIFFUSION BARRIERS; ELECTRIC CONTACTS; ELECTRONS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; INTERFACES; LAYERS; MAGNESIUM OXIDES; MAGNETORESISTANCE; ORGANIC MATTER; SEMICONDUCTOR JUNCTIONS; SPIN; TUNNEL EFFECT; VALVES

Citation Formats

Galbiati, Marta, Tatay, Sergio, Delprat, Sophie, Khanh, Hung Le, Deranlot, Cyrile, Collin, Sophie, Seneor, Pierre, E-mail: pierre.seneor@thalesgroup.com, Mattana, Richard, E-mail: richard.mattana@thalesgroup.com, Petroff, Frédéric, and Servet, Bernard. Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study. United States: N. p., 2015. Web. doi:10.1063/1.4913908.
Galbiati, Marta, Tatay, Sergio, Delprat, Sophie, Khanh, Hung Le, Deranlot, Cyrile, Collin, Sophie, Seneor, Pierre, E-mail: pierre.seneor@thalesgroup.com, Mattana, Richard, E-mail: richard.mattana@thalesgroup.com, Petroff, Frédéric, & Servet, Bernard. Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study. United States. doi:10.1063/1.4913908.
Galbiati, Marta, Tatay, Sergio, Delprat, Sophie, Khanh, Hung Le, Deranlot, Cyrile, Collin, Sophie, Seneor, Pierre, E-mail: pierre.seneor@thalesgroup.com, Mattana, Richard, E-mail: richard.mattana@thalesgroup.com, Petroff, Frédéric, and Servet, Bernard. Mon . "Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study". United States. doi:10.1063/1.4913908.
@article{osti_22412707,
title = {Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study},
author = {Galbiati, Marta and Tatay, Sergio and Delprat, Sophie and Khanh, Hung Le and Deranlot, Cyrile and Collin, Sophie and Seneor, Pierre, E-mail: pierre.seneor@thalesgroup.com and Mattana, Richard, E-mail: richard.mattana@thalesgroup.com and Petroff, Frédéric and Servet, Bernard},
abstractNote = {Molecular and organic spintronics is an emerging research field which combines the versatility of chemistry with the non-volatility of spintronics. Organic materials have already proved their potential as tunnel barriers (TBs) or spacers in spintronics devices showing sizable spin valve like magnetoresistance effects. In the last years, a large effort has been focused on the optimization of these organic spintronics devices. Insertion of a thin inorganic tunnel barrier (Al{sub 2}O{sub 3} or MgO) at the bottom ferromagnetic metal (FM)/organic interface seems to improve the spin transport efficiency. However, during the top FM electrode deposition, metal atoms are prone to diffuse through the organic layer and potentially short-circuit it. This may lead to the formation of a working but undesired FM/TB/FM magnetic tunnel junction where the organic plays no role. Indeed, establishing a protocol to demonstrate the effective spin dependent transport through the organic layer remains a key issue. Here, we focus on Co/Al{sub 2}O{sub 3}/Alq{sub 3}/Co junctions and show that combining magnetoresistance and inelastic electron tunnelling spectroscopy measurements one can sort out working “organic” and short-circuited junctions fabricated on the same wafer.},
doi = {10.1063/1.4913908},
journal = {Applied Physics Letters},
number = 8,
volume = 106,
place = {United States},
year = {Mon Feb 23 00:00:00 EST 2015},
month = {Mon Feb 23 00:00:00 EST 2015}
}