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Title: KOH based selective wet chemical etching of AlN, Al{sub x}Ga{sub 1−x}N, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Abstract

A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and Al{sub x}Ga{sub 1−x}N (up to 12×) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations.

Authors:
; ; ; ; ; ; ;  [1];  [2]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)
  2. Adroit Materials, Apex, North Carolina 27539 (United States)
Publication Date:
OSTI Identifier:
22412700
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; CRYSTALS; DISLOCATIONS; DISSOLUTION; GALLIUM NITRIDES; LIGHT EMITTING DIODES; POTASSIUM HYDROXIDES; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; VISIBLE RADIATION

Citation Formats

Guo, W., E-mail: wguo2@ncsu.edu, Kirste, R., Bryan, I., Bryan, Z., Hussey, L., Reddy, P., Collazo, R., Sitar, Z., and Tweedie, J. KOH based selective wet chemical etching of AlN, Al{sub x}Ga{sub 1−x}N, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode. United States: N. p., 2015. Web. doi:10.1063/1.4913705.
Guo, W., E-mail: wguo2@ncsu.edu, Kirste, R., Bryan, I., Bryan, Z., Hussey, L., Reddy, P., Collazo, R., Sitar, Z., & Tweedie, J. KOH based selective wet chemical etching of AlN, Al{sub x}Ga{sub 1−x}N, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode. United States. doi:10.1063/1.4913705.
Guo, W., E-mail: wguo2@ncsu.edu, Kirste, R., Bryan, I., Bryan, Z., Hussey, L., Reddy, P., Collazo, R., Sitar, Z., and Tweedie, J. Mon . "KOH based selective wet chemical etching of AlN, Al{sub x}Ga{sub 1−x}N, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode". United States. doi:10.1063/1.4913705.
@article{osti_22412700,
title = {KOH based selective wet chemical etching of AlN, Al{sub x}Ga{sub 1−x}N, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode},
author = {Guo, W., E-mail: wguo2@ncsu.edu and Kirste, R. and Bryan, I. and Bryan, Z. and Hussey, L. and Reddy, P. and Collazo, R. and Sitar, Z. and Tweedie, J.},
abstractNote = {A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and Al{sub x}Ga{sub 1−x}N (up to 12×) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations.},
doi = {10.1063/1.4913705},
journal = {Applied Physics Letters},
number = 8,
volume = 106,
place = {United States},
year = {Mon Feb 23 00:00:00 EST 2015},
month = {Mon Feb 23 00:00:00 EST 2015}
}