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Title: Work function tuning of plasma-enhanced atomic layer deposited WC{sub x}N{sub y} electrodes for metal/oxide/semiconductor devices

Abstract

One of the main challenges facing the integration of metals as gate electrodes in advanced MOS devices is control over the Fermi level position at the metal/dielectric interface. In this study, we demonstrate the ability to tune the effective work function (EWF) of W-based electrodes by process modifications of the atomic layer deposited (ALD) films. Tungsten carbo-nitrides (WC{sub x}N{sub y}) films were deposited via plasma-enhanced and/or thermal ALD processes using organometallic precursors. The process modifications enabled us to control the stoichiometry of the WC{sub x}N{sub y} films. Deposition in hydrogen plasma (without nitrogen based reactant) resulted in a stoichiometry of WC{sub 0.4} with primarily W-C chemical bonding, as determined by x-ray photoelectron spectroscopy. These films yielded a relatively low EWF of 4.2 ± 0.1 eV. The introduction of nitrogen based reactant to the plasma or the thermal ALD deposition resulted in a stoichiometry of WC{sub 0.1}N{sub 0.6–0.8} with predominantly W-N chemical bonding. These films produced a high EWF of 4.7 ± 0.1 eV.

Authors:
; ;  [1]; ; ; ; ; ;  [2]
  1. Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)
  2. Lam Research Corporation, 4000 N. First Street, San Jose, California 95134 (United States)
Publication Date:
OSTI Identifier:
22412697
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL BONDS; DEPOSITION; DIELECTRIC MATERIALS; EV RANGE; FERMI LEVEL; FILMS; INTERFACES; LAYERS; ORGANOMETALLIC COMPOUNDS; PLASMA; SEMICONDUCTOR DEVICES; SILICON OXIDES; TUNGSTEN CARBIDES; TUNGSTEN NITRIDES; WORK FUNCTIONS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Zonensain, Oren, Fadida, Sivan, Eizenberg, Moshe, Fisher, Ilanit, Gao, Juwen, Chattopadhyay, Kaushik, Harm, Greg, Mountsier, Tom, and Danek, Michal. Work function tuning of plasma-enhanced atomic layer deposited WC{sub x}N{sub y} electrodes for metal/oxide/semiconductor devices. United States: N. p., 2015. Web. doi:10.1063/1.4913715.
Zonensain, Oren, Fadida, Sivan, Eizenberg, Moshe, Fisher, Ilanit, Gao, Juwen, Chattopadhyay, Kaushik, Harm, Greg, Mountsier, Tom, & Danek, Michal. Work function tuning of plasma-enhanced atomic layer deposited WC{sub x}N{sub y} electrodes for metal/oxide/semiconductor devices. United States. doi:10.1063/1.4913715.
Zonensain, Oren, Fadida, Sivan, Eizenberg, Moshe, Fisher, Ilanit, Gao, Juwen, Chattopadhyay, Kaushik, Harm, Greg, Mountsier, Tom, and Danek, Michal. Mon . "Work function tuning of plasma-enhanced atomic layer deposited WC{sub x}N{sub y} electrodes for metal/oxide/semiconductor devices". United States. doi:10.1063/1.4913715.
@article{osti_22412697,
title = {Work function tuning of plasma-enhanced atomic layer deposited WC{sub x}N{sub y} electrodes for metal/oxide/semiconductor devices},
author = {Zonensain, Oren and Fadida, Sivan and Eizenberg, Moshe and Fisher, Ilanit and Gao, Juwen and Chattopadhyay, Kaushik and Harm, Greg and Mountsier, Tom and Danek, Michal},
abstractNote = {One of the main challenges facing the integration of metals as gate electrodes in advanced MOS devices is control over the Fermi level position at the metal/dielectric interface. In this study, we demonstrate the ability to tune the effective work function (EWF) of W-based electrodes by process modifications of the atomic layer deposited (ALD) films. Tungsten carbo-nitrides (WC{sub x}N{sub y}) films were deposited via plasma-enhanced and/or thermal ALD processes using organometallic precursors. The process modifications enabled us to control the stoichiometry of the WC{sub x}N{sub y} films. Deposition in hydrogen plasma (without nitrogen based reactant) resulted in a stoichiometry of WC{sub 0.4} with primarily W-C chemical bonding, as determined by x-ray photoelectron spectroscopy. These films yielded a relatively low EWF of 4.2 ± 0.1 eV. The introduction of nitrogen based reactant to the plasma or the thermal ALD deposition resulted in a stoichiometry of WC{sub 0.1}N{sub 0.6–0.8} with predominantly W-N chemical bonding. These films produced a high EWF of 4.7 ± 0.1 eV.},
doi = {10.1063/1.4913715},
journal = {Applied Physics Letters},
number = 8,
volume = 106,
place = {United States},
year = {Mon Feb 23 00:00:00 EST 2015},
month = {Mon Feb 23 00:00:00 EST 2015}
}