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Title: Markedly distinct growth characteristics of semipolar (112{sup ¯}2) and (1{sup ¯}1{sup ¯}22{sup ¯}) InGaN epitaxial layers

Abstract

We compare metalorganic vapor phase epitaxy of InGaN/GaN heterostructures on semipolar (112{sup ¯}2) and (1{sup ¯}1{sup ¯}22{sup ¯}) GaN bulk substrates. In incorporation efficiency is higher for (112{sup ¯}2) InGaN, which enables higher temperature growth of InGaN and is beneficial for quality improvement. InGaN/GaN quantum wells (QWs) on (112{sup ¯}2) show abrupt interfaces, but those on (1{sup ¯}1{sup ¯}22{sup ¯}) tend to form three-dimensional nanofacets. Differences in growth temperature and structures of the (112{sup ¯}2) and (1{sup ¯}1{sup ¯}22{sup ¯}) QWs cause higher internal quantum efficiencies of the (112{sup ¯}2) [(1{sup ¯}1{sup ¯}22{sup ¯})] QWs at shorter (longer) wavelengths.

Authors:
; ;  [1]
  1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)
Publication Date:
OSTI Identifier:
22412695
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; COMPARATIVE EVALUATIONS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACES; LAYERS; QUANTUM EFFICIENCY; QUANTUM WELLS; SUBSTRATES; THREE-DIMENSIONAL LATTICES; VAPOR PHASE EPITAXY; WAVELENGTHS

Citation Formats

Nishinaka, Junichi, Funato, Mitsuru, and Kawakami, Yoichi, E-mail: kawakami@kuee.kyoto-u.ac.jp. Markedly distinct growth characteristics of semipolar (112{sup ¯}2) and (1{sup ¯}1{sup ¯}22{sup ¯}) InGaN epitaxial layers. United States: N. p., 2015. Web. doi:10.1063/1.4913263.
Nishinaka, Junichi, Funato, Mitsuru, & Kawakami, Yoichi, E-mail: kawakami@kuee.kyoto-u.ac.jp. Markedly distinct growth characteristics of semipolar (112{sup ¯}2) and (1{sup ¯}1{sup ¯}22{sup ¯}) InGaN epitaxial layers. United States. doi:10.1063/1.4913263.
Nishinaka, Junichi, Funato, Mitsuru, and Kawakami, Yoichi, E-mail: kawakami@kuee.kyoto-u.ac.jp. Mon . "Markedly distinct growth characteristics of semipolar (112{sup ¯}2) and (1{sup ¯}1{sup ¯}22{sup ¯}) InGaN epitaxial layers". United States. doi:10.1063/1.4913263.
@article{osti_22412695,
title = {Markedly distinct growth characteristics of semipolar (112{sup ¯}2) and (1{sup ¯}1{sup ¯}22{sup ¯}) InGaN epitaxial layers},
author = {Nishinaka, Junichi and Funato, Mitsuru and Kawakami, Yoichi, E-mail: kawakami@kuee.kyoto-u.ac.jp},
abstractNote = {We compare metalorganic vapor phase epitaxy of InGaN/GaN heterostructures on semipolar (112{sup ¯}2) and (1{sup ¯}1{sup ¯}22{sup ¯}) GaN bulk substrates. In incorporation efficiency is higher for (112{sup ¯}2) InGaN, which enables higher temperature growth of InGaN and is beneficial for quality improvement. InGaN/GaN quantum wells (QWs) on (112{sup ¯}2) show abrupt interfaces, but those on (1{sup ¯}1{sup ¯}22{sup ¯}) tend to form three-dimensional nanofacets. Differences in growth temperature and structures of the (112{sup ¯}2) and (1{sup ¯}1{sup ¯}22{sup ¯}) QWs cause higher internal quantum efficiencies of the (112{sup ¯}2) [(1{sup ¯}1{sup ¯}22{sup ¯})] QWs at shorter (longer) wavelengths.},
doi = {10.1063/1.4913263},
journal = {Applied Physics Letters},
number = 8,
volume = 106,
place = {United States},
year = {Mon Feb 23 00:00:00 EST 2015},
month = {Mon Feb 23 00:00:00 EST 2015}
}