Markedly distinct growth characteristics of semipolar (112{sup ¯}2) and (1{sup ¯}1{sup ¯}22{sup ¯}) InGaN epitaxial layers

Journal Article · Mon Feb 23 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913263· OSTI ID:22412695

Nishinaka, Junichi; Funato, Mitsuru; Kawakami, Yoichi ^[1]

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1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

We compare metalorganic vapor phase epitaxy of InGaN/GaN heterostructures on semipolar (112{sup ¯}2) and (1{sup ¯}1{sup ¯}22{sup ¯}) GaN bulk substrates. In incorporation efficiency is higher for (112{sup ¯}2) InGaN, which enables higher temperature growth of InGaN and is beneficial for quality improvement. InGaN/GaN quantum wells (QWs) on (112{sup ¯}2) show abrupt interfaces, but those on (1{sup ¯}1{sup ¯}22{sup ¯}) tend to form three-dimensional nanofacets. Differences in growth temperature and structures of the (112{sup ¯}2) and (1{sup ¯}1{sup ¯}22{sup ¯}) QWs cause higher internal quantum efficiencies of the (112{sup ¯}2) [(1{sup ¯}1{sup ¯}22{sup ¯})] QWs at shorter (longer) wavelengths.

• OSTI ID: 22412695
• Journal Information: Applied Physics Letters, Vol. 106, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
COMPARATIVE EVALUATIONS
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INTERFACES
LAYERS
QUANTUM EFFICIENCY
QUANTUM WELLS
SUBSTRATES
THREE-DIMENSIONAL LATTICES
VAPOR PHASE EPITAXY
WAVELENGTHS