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Title: Proposal for a graphene-based all-spin logic gate

Abstract

In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (∼μm), higher data throughput, faster computing speed (∼ns), and lower power consumption (∼μA) can be expected from the G-ASLG.

Authors:
;  [1];  [2];  [2]; ; ; ; ;  [3];  [2];  [1]
  1. Department of Electrical Engineering, Spintronics Interdisciplinary Center, Beihang University, Beijing 100191 (China)
  2. (France)
  3. Institut d'Electronique Fondamentale, Univ. Paris-Sud, F-91405 Orsay (France)
Publication Date:
OSTI Identifier:
22412660
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; COMPARATIVE EVALUATIONS; DIFFUSION LENGTH; GRAPHENE; LAYERS; MAGNETIZATION; MAGNETORESISTANCE; MATHEMATICAL SOLUTIONS; PROBES; SPIN; TORQUE; TUNNEL EFFECT; VALVES

Citation Formats

Su, Li, Zhao, Weisheng, E-mail: weisheng.zhao@u-psud.fr, Institut d'Electronique Fondamentale, Univ. Paris-Sud, F-91405 Orsay, UMR 8622, CNRS, F-91405 Orsay, Zhang, Yue, Querlioz, Damien, Klein, Jacques-Olivier, Dollfus, Philippe, Bournel, Arnaud, UMR 8622, CNRS, F-91405 Orsay, and Zhang, Youguang. Proposal for a graphene-based all-spin logic gate. United States: N. p., 2015. Web. doi:10.1063/1.4913303.
Su, Li, Zhao, Weisheng, E-mail: weisheng.zhao@u-psud.fr, Institut d'Electronique Fondamentale, Univ. Paris-Sud, F-91405 Orsay, UMR 8622, CNRS, F-91405 Orsay, Zhang, Yue, Querlioz, Damien, Klein, Jacques-Olivier, Dollfus, Philippe, Bournel, Arnaud, UMR 8622, CNRS, F-91405 Orsay, & Zhang, Youguang. Proposal for a graphene-based all-spin logic gate. United States. doi:10.1063/1.4913303.
Su, Li, Zhao, Weisheng, E-mail: weisheng.zhao@u-psud.fr, Institut d'Electronique Fondamentale, Univ. Paris-Sud, F-91405 Orsay, UMR 8622, CNRS, F-91405 Orsay, Zhang, Yue, Querlioz, Damien, Klein, Jacques-Olivier, Dollfus, Philippe, Bournel, Arnaud, UMR 8622, CNRS, F-91405 Orsay, and Zhang, Youguang. Mon . "Proposal for a graphene-based all-spin logic gate". United States. doi:10.1063/1.4913303.
@article{osti_22412660,
title = {Proposal for a graphene-based all-spin logic gate},
author = {Su, Li and Zhao, Weisheng, E-mail: weisheng.zhao@u-psud.fr and Institut d'Electronique Fondamentale, Univ. Paris-Sud, F-91405 Orsay and UMR 8622, CNRS, F-91405 Orsay and Zhang, Yue and Querlioz, Damien and Klein, Jacques-Olivier and Dollfus, Philippe and Bournel, Arnaud and UMR 8622, CNRS, F-91405 Orsay and Zhang, Youguang},
abstractNote = {In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (∼μm), higher data throughput, faster computing speed (∼ns), and lower power consumption (∼μA) can be expected from the G-ASLG.},
doi = {10.1063/1.4913303},
journal = {Applied Physics Letters},
number = 7,
volume = 106,
place = {United States},
year = {Mon Feb 16 00:00:00 EST 2015},
month = {Mon Feb 16 00:00:00 EST 2015}
}