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Title: Formation of a strontium buffer layer on Si(001) by pulsed-laser deposition through the Sr/Si(001)(2 × 3) surface reconstruction

Abstract

The formation of a ½ monolayer (ML) of strontium (Sr) on Si(001) represents the most widely used and effective passivation procedure for the epitaxial growth of strontium titanate (SrTiO{sub 3}) on Si with molecular beam epitaxy (MBE). In the present study, we demonstrate experimentally the possibility of preparing such a buffer layer with the pulsed-laser deposition (PLD) technique. In-situ analysis using reflection high-energy electron diffraction (RHEED) showed surface structure evolution from two-domain (2 × 1) + (1 × 2), exhibited by the bare silicon surface, to a (3 × 2) + (2 × 3) structure at 1/6 ML Sr coverage, which is then replaced by (1 × 2) + (2 × 1) structure at ¼ ML and maintained up to ½ ML coverage. In addition, two different processes for the removal of native silicon dioxide (SiO{sub 2}) layer were studied: thermal and Sr-induced deoxidation process. Annealing above 1100 °C proved to be the most efficient in terms of carbon contamination. The results highlight the possibilities of using the PLD technique for the synthesis of an epitaxial SrTiO{sub 3} layer on Si, needed for the integration of different functional oxides with a Si platform.

Authors:
 [1];  [2]; ;  [1]
  1. Advanced Materials Department, Jožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia)
  2. (Slovenia)
Publication Date:
OSTI Identifier:
22412646
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CARBON; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ENERGY BEAM DEPOSITION; LASER RADIATION; LAYERS; MOLECULAR BEAM EPITAXY; PASSIVATION; PULSED IRRADIATION; REFLECTION; SILICON; SILICON OXIDES; STRONTIUM TITANATES; SURFACES; SYNTHESIS

Citation Formats

Klement, D., E-mail: dejan.klement@ijs.si, Jožef Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana, Spreitzer, M., and Suvorov, D.. Formation of a strontium buffer layer on Si(001) by pulsed-laser deposition through the Sr/Si(001)(2 × 3) surface reconstruction. United States: N. p., 2015. Web. doi:10.1063/1.4913464.
Klement, D., E-mail: dejan.klement@ijs.si, Jožef Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana, Spreitzer, M., & Suvorov, D.. Formation of a strontium buffer layer on Si(001) by pulsed-laser deposition through the Sr/Si(001)(2 × 3) surface reconstruction. United States. doi:10.1063/1.4913464.
Klement, D., E-mail: dejan.klement@ijs.si, Jožef Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana, Spreitzer, M., and Suvorov, D.. Mon . "Formation of a strontium buffer layer on Si(001) by pulsed-laser deposition through the Sr/Si(001)(2 × 3) surface reconstruction". United States. doi:10.1063/1.4913464.
@article{osti_22412646,
title = {Formation of a strontium buffer layer on Si(001) by pulsed-laser deposition through the Sr/Si(001)(2 × 3) surface reconstruction},
author = {Klement, D., E-mail: dejan.klement@ijs.si and Jožef Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana and Spreitzer, M. and Suvorov, D.},
abstractNote = {The formation of a ½ monolayer (ML) of strontium (Sr) on Si(001) represents the most widely used and effective passivation procedure for the epitaxial growth of strontium titanate (SrTiO{sub 3}) on Si with molecular beam epitaxy (MBE). In the present study, we demonstrate experimentally the possibility of preparing such a buffer layer with the pulsed-laser deposition (PLD) technique. In-situ analysis using reflection high-energy electron diffraction (RHEED) showed surface structure evolution from two-domain (2 × 1) + (1 × 2), exhibited by the bare silicon surface, to a (3 × 2) + (2 × 3) structure at 1/6 ML Sr coverage, which is then replaced by (1 × 2) + (2 × 1) structure at ¼ ML and maintained up to ½ ML coverage. In addition, two different processes for the removal of native silicon dioxide (SiO{sub 2}) layer were studied: thermal and Sr-induced deoxidation process. Annealing above 1100 °C proved to be the most efficient in terms of carbon contamination. The results highlight the possibilities of using the PLD technique for the synthesis of an epitaxial SrTiO{sub 3} layer on Si, needed for the integration of different functional oxides with a Si platform.},
doi = {10.1063/1.4913464},
journal = {Applied Physics Letters},
number = 7,
volume = 106,
place = {United States},
year = {Mon Feb 16 00:00:00 EST 2015},
month = {Mon Feb 16 00:00:00 EST 2015}
}