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Title: Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Abstract

We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 × 10{sup −2} cm{sup 2}/s. We also report on the device's optical response characteristics at 78 K.

Authors:
; ;  [1];  [2]; ; ;  [3]; ; ;  [4]
  1. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  2. Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  3. Center for Photonics Innovation and School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States)
  4. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
22412643
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONIDES; CARRIER LIFETIME; CHARGE CARRIERS; DEPLETION LAYER; DIFFUSION LENGTH; ELECTRIC CURRENTS; INDIUM ARSENIDES; INTERFACES; NIOBIUM NITRIDES; PHOTODETECTORS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SUPERLATTICES; TIME RESOLUTION

Citation Formats

Zuo, Daniel, Liu, Runyu, Wasserman, Daniel, Mabon, James, He, Zhao-Yu, Liu, Shi, Zhang, Yong-Hang, Kadlec, Emil A., Olson, Benjamin V., and Shaner, Eric A.. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors. United States: N. p., 2015. Web. doi:10.1063/1.4913312.
Zuo, Daniel, Liu, Runyu, Wasserman, Daniel, Mabon, James, He, Zhao-Yu, Liu, Shi, Zhang, Yong-Hang, Kadlec, Emil A., Olson, Benjamin V., & Shaner, Eric A.. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors. United States. https://doi.org/10.1063/1.4913312
Zuo, Daniel, Liu, Runyu, Wasserman, Daniel, Mabon, James, He, Zhao-Yu, Liu, Shi, Zhang, Yong-Hang, Kadlec, Emil A., Olson, Benjamin V., and Shaner, Eric A.. Mon . "Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors". United States. https://doi.org/10.1063/1.4913312.
@article{osti_22412643,
title = {Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors},
author = {Zuo, Daniel and Liu, Runyu and Wasserman, Daniel and Mabon, James and He, Zhao-Yu and Liu, Shi and Zhang, Yong-Hang and Kadlec, Emil A. and Olson, Benjamin V. and Shaner, Eric A.},
abstractNote = {We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 × 10{sup −2} cm{sup 2}/s. We also report on the device's optical response characteristics at 78 K.},
doi = {10.1063/1.4913312},
url = {https://www.osti.gov/biblio/22412643}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 106,
place = {United States},
year = {2015},
month = {2}
}

Works referencing / citing this record:

Fabrication and Characterization of an InAs(Sb)/In x Ga 1− x As y Sb 1− y Type‐II Superlattice
journal, May 2019


Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors
journal, June 2019


Theoretical study of native point defects in strained-layer superlattice systems
journal, April 2018


Temperature-Dependent Minority-Carrier Mobility in p -Type In As / Ga Sb Type-II-Superlattice Photodetectors
journal, February 2019